{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Hoang NT"],"funding":["National Research Foundation of Korea"],"pagination":["21202"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8551200"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["11(1)"],"pubmed_abstract":["Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm<sup>-1</sup>. Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three A<sub>g</sub> modes at 40.2 ([Formula: see text]), 152.5 ([Formula: see text]), and 283.8 ([Formula: see text]) cm<sup>-1</sup> exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis."],"journal":["Scientific reports"],"pubmed_title":["Thickness-dependent in-plane anisotropy of GaTe phonons."],"pmcid":["PMC8551200"],"funding_grant_id":["2019R1F1A1058473","2020R1A5A1016518","2020K1A4A7A02095438","2019R1A2C1085907"],"pubmed_authors":["Vu TH","Hoang NT","Seong MJ","Cho S","Lee JH"],"additional_accession":[]},"is_claimable":false,"name":"Thickness-dependent in-plane anisotropy of GaTe phonons.","description":"Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm<sup>-1</sup>. Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three A<sub>g</sub> modes at 40.2 ([Formula: see text]), 152.5 ([Formula: see text]), and 283.8 ([Formula: see text]) cm<sup>-1</sup> exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis.","dates":{"release":"2021-01-01T00:00:00Z","publication":"2021 Oct","modification":"2025-04-18T19:09:55.665Z","creation":"2025-04-07T06:51:58.899Z"},"accession":"S-EPMC8551200","cross_references":{"pubmed":["34707186"],"doi":["10.1038/s41598-021-00673-0"]}}