biostudies-literatureHoang NTNational Research Foundation of Korea21202https://www.ebi.ac.uk/biostudies/studies/S-EPMC8551200biostudies-literatureUnknown11(1)Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm^-1. Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three A_g modes at 40.2 ([Formula: see text]), 152.5 ([Formula: see text]), and 283.8 ([Formula: see text]) cm^-1 exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis.Scientific reportsThickness-dependent in-plane anisotropy of GaTe phonons.PMC85512002019R1F1A10584732020R1A5A10165182020K1A4A7A020954382019R1A2C1085907Vu THHoang NTSeong MJCho SLee JHfalseThickness-dependent in-plane anisotropy of GaTe phonons.Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm^-1. Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three A_g modes at 40.2 ([Formula: see text]), 152.5 ([Formula: see text]), and 283.8 ([Formula: see text]) cm^-1 exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis.2021-01-01T00:00:00Z2021 Oct2025-04-18T19:09:55.665Z2025-04-07T06:51:58.899ZS-EPMC85512003470718610.1038/s41598-021-00673-0