biostudies-literatureLi HNatural Science Foundation of Hubei ProvinceWuhan Institute of TechnologyNational Natural Science Foundation of China11663-11671https://www.ebi.ac.uk/biostudies/studies/S-EPMC8695986biostudies-literatureUnknown11(19)High-performance broadband photodetectors that can operate at UV, visible, and near-infrared wavelengths have been fabricated based on CsPb(Br/I)<sub>3</sub> nanocrystal (NC)/CdS-microwire (MW) heterostructures. Under an incident light illumination of 365, 530, and 660 nm, the CsPb(Br/I)<sub>3</sub>-NC/CdS-MW-heterostructure-based photodetector exhibited a superior photosensitivity and broader spectral response than those of a bare-CdS-MW-based photodetector, which can be attributed to the light-trapping ability of the CsPb(Br/I)<sub>3</sub> NCs and charge-transfer efficiency at the CsPb(Br/I)<sub>3</sub>-NC/CdS-MW-heterojunction interface. The photodetector based on the CsPb(Br/I)<sub>3</sub> NC/CdS-MW heterostructure also exhibited a good response to near-infrared light (760 and 810 nm) because the produced heterojunction facilitates the spatial separation of the photogenerated carriers, and the carriers are transferred from the CsPb(Br/I)<sub>3</sub> NC part to the CdS MW part through diffusion due to the relatively long diffusion length in the CsPb(Br/I)<sub>3</sub> layer. Therefore, the proposed photodetectors are promising for constructing high-performance broadband optoelectronic devices.RSC advancesHigh-performance broadband photodetectors based on all-inorganic perovskite CsPb(Br/I)<sub>3</sub> nanocrystal/CdS-microwire heterostructures.PMC869598618QD24XZJJ20201322018CFB10611804257Li HLiu YJin XXiong LMa LLin WLi AWang YfalseHigh-performance broadband photodetectors based on all-inorganic perovskite CsPb(Br/I)<sub>3</sub> nanocrystal/CdS-microwire heterostructures.High-performance broadband photodetectors that can operate at UV, visible, and near-infrared wavelengths have been fabricated based on CsPb(Br/I)<sub>3</sub> nanocrystal (NC)/CdS-microwire (MW) heterostructures. Under an incident light illumination of 365, 530, and 660 nm, the CsPb(Br/I)<sub>3</sub>-NC/CdS-MW-heterostructure-based photodetector exhibited a superior photosensitivity and broader spectral response than those of a bare-CdS-MW-based photodetector, which can be attributed to the light-trapping ability of the CsPb(Br/I)<sub>3</sub> NCs and charge-transfer efficiency at the CsPb(Br/I)<sub>3</sub>-NC/CdS-MW-heterojunction interface. The photodetector based on the CsPb(Br/I)<sub>3</sub> NC/CdS-MW heterostructure also exhibited a good response to near-infrared light (760 and 810 nm) because the produced heterojunction facilitates the spatial separation of the photogenerated carriers, and the carriers are transferred from the CsPb(Br/I)<sub>3</sub> NC part to the CdS MW part through diffusion due to the relatively long diffusion length in the CsPb(Br/I)<sub>3</sub> layer. Therefore, the proposed photodetectors are promising for constructing high-performance broadband optoelectronic devices.2021-01-01T00:00:00Z2021 Mar2025-04-22T10:00:23.104Z2025-04-05T23:22:01.007ZS-EPMC86959863542360810.1039/d1ra00890k