<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>11(25)</volume><submitter>Haque E</submitter><pubmed_abstract>Here, two compounds, AZnSb (A = Rb, Cs), have been predicted to be potential materials for thermoelectric device applications at high temperatures by using first-principles calculations based on density functional theory (DFT), density functional perturbation theory (DFPT), and Boltzmann transport theory. The layered structure, and presence of heavier elements Rb/Cs and Sb induce high anharmonicity (larger values of mode Grüneisen parameter), low Debye temperature, and intense phonon scattering. Thus, these compounds possess intrinsically low lattice thermal conductivity (&lt;i>κ&lt;/i> &lt;sub>l&lt;/sub>), ∼0.5 W m&lt;sup>-1&lt;/sup> K&lt;sup>-1&lt;/sup> on average at 900 K. Highly non-parabolic bands and relatively wide bandgap (∼1.37 and 1.1 eV for RbZnSb and CsZnSb, respectively, by mBJ potential including spin-orbit coupling effect) induce large Seebeck coefficient while highly dispersive and two-fold degenerate bands induce high electrical conductivity. Large power factor and low values of &lt;i>κ&lt;/i> &lt;sub>l&lt;/sub> lead to a high average thermoelectric figure of merit (&lt;i>ZT&lt;/i>) of RbZnSb and CsZnSb, reaching 1.22 and 1.1 and 0.87 and 1.14 at 900 K for p-and n-type carriers, respectively.</pubmed_abstract><journal>RSC advances</journal><pagination>15486-15496</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC8698259</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>First-principles predictions of low lattice thermal conductivity and high thermoelectric performance of AZnSb (A = Rb, Cs).</pubmed_title><pmcid>PMC8698259</pmcid><pubmed_authors>Haque E</pubmed_authors></additional><is_claimable>false</is_claimable><name>First-principles predictions of low lattice thermal conductivity and high thermoelectric performance of AZnSb (A = Rb, Cs).</name><description>Here, two compounds, AZnSb (A = Rb, Cs), have been predicted to be potential materials for thermoelectric device applications at high temperatures by using first-principles calculations based on density functional theory (DFT), density functional perturbation theory (DFPT), and Boltzmann transport theory. The layered structure, and presence of heavier elements Rb/Cs and Sb induce high anharmonicity (larger values of mode Grüneisen parameter), low Debye temperature, and intense phonon scattering. Thus, these compounds possess intrinsically low lattice thermal conductivity (&lt;i>κ&lt;/i> &lt;sub>l&lt;/sub>), ∼0.5 W m&lt;sup>-1&lt;/sup> K&lt;sup>-1&lt;/sup> on average at 900 K. Highly non-parabolic bands and relatively wide bandgap (∼1.37 and 1.1 eV for RbZnSb and CsZnSb, respectively, by mBJ potential including spin-orbit coupling effect) induce large Seebeck coefficient while highly dispersive and two-fold degenerate bands induce high electrical conductivity. Large power factor and low values of &lt;i>κ&lt;/i> &lt;sub>l&lt;/sub> lead to a high average thermoelectric figure of merit (&lt;i>ZT&lt;/i>) of RbZnSb and CsZnSb, reaching 1.22 and 1.1 and 0.87 and 1.14 at 900 K for p-and n-type carriers, respectively.</description><dates><release>2021-01-01T00:00:00Z</release><publication>2021 Apr</publication><modification>2025-04-22T09:58:49.663Z</modification><creation>2025-04-05T23:21:37.397Z</creation></dates><accession>S-EPMC8698259</accession><cross_references><pubmed>35424042</pubmed><doi>10.1039/d1ra01938d</doi></cross_references></HashMap>