{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Ao DW"],"funding":["Science and Technology plan project of Shenzhen","Guangdong Basic and Applied Basic Research Foundation","National Natural Science Foundation of China"],"pagination":["e2103547"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8844477"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["9(5)"],"pubmed_abstract":["Flexible Bi<sub>2</sub> Te<sub>3</sub> -based thermoelectric devices can function as power generators for powering wearable electronics or chip-sensors for internet-of-things. However, the unsatisfied performance of n-type Bi<sub>2</sub> Te<sub>3</sub> flexible thin films significantly limits their wide application. In this study, a novel thermal diffusion method is employed to fabricate n-type Te-embedded Bi<sub>2</sub> Te<sub>3</sub> flexible thin films on flexible polyimide substrates, where Te embeddings can be achieved by tuning the thermal diffusion temperature and correspondingly result in an energy filtering effect at the Bi<sub>2</sub> Te<sub>3</sub> /Te interfaces. The energy filtering effect can lead to a high Seebeck coefficient ≈160 µV K<sup>-1</sup> as well as high carrier mo"],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["Novel Thermal Diffusion Temperature Engineering Leading to High Thermoelectric Performance in Bi<sub>2</sub> Te<sub>3</sub> -Based Flexible Thin-Films."],"pmcid":["PMC8844477"],"funding_grant_id":["2020A1515010515","2019A1515110107","11604212","20200811230408001"],"pubmed_authors":["Wei M","Zhang XH","Ao DW","Chen ZG","Zheng ZH","Li F","Liu WD","Chen YX","Jabar B","Fan P","Shi XL","Liang GX"],"additional_accession":[]},"is_claimable":false,"name":"Novel Thermal Diffusion Temperature Engineering Leading to High Thermoelectric Performance in Bi<sub>2</sub> Te<sub>3</sub> -Based Flexible Thin-Films.","description":"Flexible Bi<sub>2</sub> Te<sub>3</sub> -based thermoelectric devices can function as power generators for powering wearable electronics or chip-sensors for internet-of-things. However, the unsatisfied performance of n-type Bi<sub>2</sub> Te<sub>3</sub> flexible thin films significantly limits their wide application. In this study, a novel thermal diffusion method is employed to fabricate n-type Te-embedded Bi<sub>2</sub> Te<sub>3</sub> flexible thin films on flexible polyimide substrates, where Te embeddings can be achieved by tuning the thermal diffusion temperature and correspondingly result in an energy filtering effect at the Bi<sub>2</sub> Te<sub>3</sub> /Te interfaces. The energy filtering effect can lead to a high Seebeck coefficient ≈160 µV K<sup>-1</sup> as well as high carrier mo","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Feb","modification":"2026-03-27T16:41:59.754Z","creation":"2025-04-04T08:41:14.181Z"},"accession":"S-EPMC8844477","cross_references":{"pubmed":["34939357"],"doi":["10.1002/advs.202103547"]}}