biostudies-literatureAo DWScience and Technology plan project of ShenzhenGuangdong Basic and Applied Basic Research FoundationNational Natural Science Foundation of Chinae2103547https://www.ebi.ac.uk/biostudies/studies/S-EPMC8844477biostudies-literatureUnknown9(5)Flexible Bi₂ Te₃ -based thermoelectric devices can function as power generators for powering wearable electronics or chip-sensors for internet-of-things. However, the unsatisfied performance of n-type Bi₂ Te₃ flexible thin films significantly limits their wide application. In this study, a novel thermal diffusion method is employed to fabricate n-type Te-embedded Bi₂ Te₃ flexible thin films on flexible polyimide substrates, where Te embeddings can be achieved by tuning the thermal diffusion temperature and correspondingly result in an energy filtering effect at the Bi₂ Te₃ /Te interfaces. The energy filtering effect can lead to a high Seebeck coefficient ≈160 µV K^-1 as well as high carrier moAdvanced science (Weinheim, Baden-Wurttemberg, Germany)Novel Thermal Diffusion Temperature Engineering Leading to High Thermoelectric Performance in Bi₂ Te₃ -Based Flexible Thin-Films.PMC88444772020A15150105152019A15151101071160421220200811230408001Wei MZhang XHAo DWChen ZGZheng ZHLi FLiu WDChen YXJabar BFan PShi XLLiang GXfalseNovel Thermal Diffusion Temperature Engineering Leading to High Thermoelectric Performance in Bi₂ Te₃ -Based Flexible Thin-Films.Flexible Bi₂ Te₃ -based thermoelectric devices can function as power generators for powering wearable electronics or chip-sensors for internet-of-things. However, the unsatisfied performance of n-type Bi₂ Te₃ flexible thin films significantly limits their wide application. In this study, a novel thermal diffusion method is employed to fabricate n-type Te-embedded Bi₂ Te₃ flexible thin films on flexible polyimide substrates, where Te embeddings can be achieved by tuning the thermal diffusion temperature and correspondingly result in an energy filtering effect at the Bi₂ Te₃ /Te interfaces. The energy filtering effect can lead to a high Seebeck coefficient ≈160 µV K^-1 as well as high carrier mo2022-01-01T00:00:00Z2022 Feb2026-03-27T16:41:59.754Z2025-04-04T08:41:14.181ZS-EPMC88444773493935710.1002/advs.202103547