{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Kim J"],"funding":["Element Strategy Initiative to Form Core Research Center","Japan Science and Technology Agency (JST) PRESTO","Ministry of Education, Culture, Sports, Science and Technology (MEXT)"],"pagination":["e2104993"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8844482"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["9(5)"],"pubmed_abstract":["Metal halide perovskites (MHPs) are plausible candidates for practical p-type semiconductors. However, in thin film transistor (TFT) applications, both 2D PEA<sub>2</sub> SnI<sub>4</sub> and 3D FASnI<sub>3</sub> MHPs have different drawbacks. In 2D MHP, the TFT mobility is seriously reduced by grain-boundary issues, whereas 3D MHP has an uncontrollably high hole density, which results in quite a large threshold voltage (V<sub>th</sub> ). To overcome these problems, a new concept based on a 2D-3D core-shell structure is herein proposed. In the proposed structure, a 3D MHP core is fully isolated by a 2D MHP, providing two desirable effects as follows. (i) V<sub>th</sub> can be independently controlled by the 2D component, and (ii) the grain-boundary resistance is significantly improved by the 2D/3D interface. Moreover, SnF<sub>2</sub> additives are used, and they facilitate the formation of the 2D/3D core-shell structure. Consequently, a high-performance p-type Sn-based MHP TFT with a field-effect mobility of ≈25 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> is obtained. The voltage gain of a complementary metal oxide semiconductor (CMOS) inverter comprising an n-channel InGaZnO<sub>x</sub> TFT and a p-channel Sn-MHP TFT is ≈200 V/V at V<sub>DD</sub> = 20 V. Overall, the proposed 2D/3D core-shell structure is expected to provide a new route for obtaining high-performance MHP TFTs."],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D-3D Core-Shell Structure."],"pmcid":["PMC8844482"],"funding_grant_id":["JPMJPR21Q4","JPMXP0112101001"],"pubmed_authors":["Sim K","Iimura S","Shiah YS","Tsuji M","Hosono H","Kim J","Sasase M","Abe K"],"additional_accession":[]},"is_claimable":false,"name":"High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D-3D Core-Shell Structure.","description":"Metal halide perovskites (MHPs) are plausible candidates for practical p-type semiconductors. However, in thin film transistor (TFT) applications, both 2D PEA<sub>2</sub> SnI<sub>4</sub> and 3D FASnI<sub>3</sub> MHPs have different drawbacks. In 2D MHP, the TFT mobility is seriously reduced by grain-boundary issues, whereas 3D MHP has an uncontrollably high hole density, which results in quite a large threshold voltage (V<sub>th</sub> ). To overcome these problems, a new concept based on a 2D-3D core-shell structure is herein proposed. In the proposed structure, a 3D MHP core is fully isolated by a 2D MHP, providing two desirable effects as follows. (i) V<sub>th</sub> can be independently controlled by the 2D component, and (ii) the grain-boundary resistance is significantly improved by the 2D/3D interface. Moreover, SnF<sub>2</sub> additives are used, and they facilitate the formation of the 2D/3D core-shell structure. Consequently, a high-performance p-type Sn-based MHP TFT with a field-effect mobility of ≈25 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> is obtained. The voltage gain of a complementary metal oxide semiconductor (CMOS) inverter comprising an n-channel InGaZnO<sub>x</sub> TFT and a p-channel Sn-MHP TFT is ≈200 V/V at V<sub>DD</sub> = 20 V. Overall, the proposed 2D/3D core-shell structure is expected to provide a new route for obtaining high-performance MHP TFTs.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Feb","modification":"2025-04-21T17:02:19.955Z","creation":"2025-04-21T17:02:19.955Z"},"accession":"S-EPMC8844482","cross_references":{"pubmed":["34927379"],"doi":["10.1002/advs.202104993"]}}