<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>25(3)</volume><submitter>Xiong X</submitter><funding>National Natural Science Foundation of China</funding><funding>China Postdoctoral Science Foundation</funding><funding>Major Research Plan</funding><pubmed_abstract>Two-dimensional van der Waals materials offer various possibilities for synaptic devices, matching the requirements of intelligent and energy-efficient computation. However, very few studies on robust flexible synaptic transistors have been reported, which hold great potential for soft robotics and wearable applications. Here a floating gate synaptic device based on ambipolar black phosphorus (BP) on a flexible substrate has been demonstrated with two working modes. The three-terminal mode, where the carriers are injected into the floating gate, shows a nonvolatile memory effect, whereas the two-terminal mode shows a quasi-nonvolatile memory effect. Remarkably, the synaptic device working on the three-terminal mode shows an excellent performance in the energy-efficient computation of sub-f</pubmed_abstract><journal>iScience</journal><pagination>103947</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC8904616</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus.</pubmed_title><pmcid>PMC8904616</pmcid><pubmed_authors>Li X</pubmed_authors><pubmed_authors>Wang X</pubmed_authors><pubmed_authors>Hu Q</pubmed_authors><pubmed_authors>Wu Y</pubmed_authors><pubmed_authors>Xiong X</pubmed_authors></additional><is_claimable>false</is_claimable><name>Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus.</name><description>Two-dimensional van der Waals materials offer various possibilities for synaptic devices, matching the requirements of intelligent and energy-efficient computation. However, very few studies on robust flexible synaptic transistors have been reported, which hold great potential for soft robotics and wearable applications. Here a floating gate synaptic device based on ambipolar black phosphorus (BP) on a flexible substrate has been demonstrated with two working modes. The three-terminal mode, where the carriers are injected into the floating gate, shows a nonvolatile memory effect, whereas the two-terminal mode shows a quasi-nonvolatile memory effect. Remarkably, the synaptic device working on the three-terminal mode shows an excellent performance in the energy-efficient computation of sub-f</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Mar</publication><modification>2025-04-04T12:56:41.332Z</modification><creation>2025-04-04T12:56:41.332Z</creation></dates><accession>S-EPMC8904616</accession><cross_references><pubmed>35281742</pubmed><doi>10.1016/j.isci.2022.103947</doi></cross_references></HashMap>