<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Deo M</submitter><funding>Helmholtz Association of German Research Centres</funding><funding>Deutsche Forschungsgemeinschaft</funding><funding>Science and Engineering Research Board</funding><pagination>780</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC8912079</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>12(5)</volume><pubmed_abstract>Electron transporting layers facilitating electron extraction and suppressing hole recombination at the cathode are crucial components in any thin-film solar cell geometry, including that of metal-halide perovskite solar cells. Amorphous tantalum oxide (Ta&lt;sub>2&lt;/sub>O&lt;sub>5&lt;/sub>) deposited by spin coating was explored as an electron transport material for perovskite solar cells, achieving power conversion efficiency (PCE) up to ~14%. Ultraviolet photoelectron spectroscopy (UPS) measurements revealed that the extraction of photogenerated electrons is facilitated due to proper alignment of bandgap energies. Steady-state photoluminescence spectroscopy (PL) verified efficient charge transport from perovskite absorber film to thin Ta&lt;sub>2&lt;/sub>O&lt;sub>5&lt;/sub> layer. Our findings suggest that tantalum oxide as an n-type semiconductor with a calculated carrier density of ~7 × 10&lt;sup>18&lt;/sup>/cm&lt;sup>3&lt;/sup> in amorphous Ta&lt;sub>2&lt;/sub>O&lt;sub>5&lt;/sub> films, is a potentially competitive candidate for an electron transport material in perovskite solar cells.</pubmed_abstract><journal>Nanomaterials (Basel, Switzerland)</journal><pubmed_title>Tantalum Oxide as an Efficient Alternative Electron Transporting Layer for Perovskite Solar Cells.</pubmed_title><pmcid>PMC8912079</pmcid><funding_grant_id>SPP2196</funding_grant_id><funding_grant_id>SERB-Overseas postdoc fellowship scheme</funding_grant_id><funding_grant_id>PEROSEED</funding_grant_id><pubmed_authors>Tachibana Y</pubmed_authors><pubmed_authors>Mathur S</pubmed_authors><pubmed_authors>Haddad J</pubmed_authors><pubmed_authors>Kulkarni A</pubmed_authors><pubmed_authors>Stadler D</pubmed_authors><pubmed_authors>Unlu F</pubmed_authors><pubmed_authors>Liu M</pubmed_authors><pubmed_authors>Deo M</pubmed_authors><pubmed_authors>Bhardwaj A</pubmed_authors><pubmed_authors>Mollmann A</pubmed_authors><pubmed_authors>Ludwig T</pubmed_authors><pubmed_authors>Kirchartz T</pubmed_authors></additional><is_claimable>false</is_claimable><name>Tantalum Oxide as an Efficient Alternative Electron Transporting Layer for Perovskite Solar Cells.</name><description>Electron transporting layers facilitating electron extraction and suppressing hole recombination at the cathode are crucial components in any thin-film solar cell geometry, including that of metal-halide perovskite solar cells. Amorphous tantalum oxide (Ta&lt;sub>2&lt;/sub>O&lt;sub>5&lt;/sub>) deposited by spin coating was explored as an electron transport material for perovskite solar cells, achieving power conversion efficiency (PCE) up to ~14%. Ultraviolet photoelectron spectroscopy (UPS) measurements revealed that the extraction of photogenerated electrons is facilitated due to proper alignment of bandgap energies. Steady-state photoluminescence spectroscopy (PL) verified efficient charge transport from perovskite absorber film to thin Ta&lt;sub>2&lt;/sub>O&lt;sub>5&lt;/sub> layer. Our findings suggest that tantalum oxide as an n-type semiconductor with a calculated carrier density of ~7 × 10&lt;sup>18&lt;/sup>/cm&lt;sup>3&lt;/sup> in amorphous Ta&lt;sub>2&lt;/sub>O&lt;sub>5&lt;/sub> films, is a potentially competitive candidate for an electron transport material in perovskite solar cells.</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Feb</publication><modification>2026-06-19T03:08:08.941Z</modification><creation>2025-04-05T20:50:01.479Z</creation></dates><accession>S-EPMC8912079</accession><cross_references><pubmed>35269269</pubmed><doi>10.3390/nano12050780</doi></cross_references></HashMap>