{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Han T"],"funding":["Natural Science Foundation of Hunan Province (Hunan Provincial Natural Science Foundation)","National Natural Science Foundation of China (National Science Foundation of China)"],"pagination":["1332"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8917130"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["13(1)"],"pubmed_abstract":["The narrow bandgap of near-infrared (NIR) polymers is a major barrier to improving the performance of NIR phototransistors. The existing technique for overcoming this barrier is to construct a bilayer device (channel layer/bulk heterojunction (BHJ) layer). However, acceptor phases of the BHJ dissolve into the channel layer and are randomly distributed by the spin-coating method, resulting in turn-on voltages (V<sub>o</sub>) and off-state dark currents remaining at a high level. In this work, a diffusion interface layer is formed between the channel layer and BHJ layer after treating the film transfer method (FTM)-based NIR phototransistors with solvent vapor annealing (SVA). The newly formed diffusion interface layer makes it possible to control the acceptor phase distribution. The performance of the FTM-based device improves after SVA. V<sub>o</sub> decreases from 26 V to zero, and the dark currents decrease by one order of magnitude. The photosensitivity (I<sub>ph</sub>/I<sub>dark</sub>) increases from 22 to 1.7 × 10<sup>7</sup>."],"journal":["Nature communications"],"pubmed_title":["Diffusion interface layer controlling the acceptor phase of bilayer near-infrared polymer phototransistors with ultrahigh photosensitivity."],"pmcid":["PMC8917130"],"funding_grant_id":["2019JJ50565","51801034, 52172067","51873068, 51573055"],"pubmed_authors":["Liu L","Ding S","Shen N","Huang X","Zhang X","Jiang C","Hou X","Han T","Wang Z","Zhou Z"],"additional_accession":[]},"is_claimable":false,"name":"Diffusion interface layer controlling the acceptor phase of bilayer near-infrared polymer phototransistors with ultrahigh photosensitivity.","description":"The narrow bandgap of near-infrared (NIR) polymers is a major barrier to improving the performance of NIR phototransistors. The existing technique for overcoming this barrier is to construct a bilayer device (channel layer/bulk heterojunction (BHJ) layer). However, acceptor phases of the BHJ dissolve into the channel layer and are randomly distributed by the spin-coating method, resulting in turn-on voltages (V<sub>o</sub>) and off-state dark currents remaining at a high level. In this work, a diffusion interface layer is formed between the channel layer and BHJ layer after treating the film transfer method (FTM)-based NIR phototransistors with solvent vapor annealing (SVA). The newly formed diffusion interface layer makes it possible to control the acceptor phase distribution. The performance of the FTM-based device improves after SVA. V<sub>o</sub> decreases from 26 V to zero, and the dark currents decrease by one order of magnitude. The photosensitivity (I<sub>ph</sub>/I<sub>dark</sub>) increases from 22 to 1.7 × 10<sup>7</sup>.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Mar","modification":"2025-04-18T15:07:30.203Z","creation":"2025-04-07T01:43:46.788Z"},"accession":"S-EPMC8917130","cross_references":{"pubmed":["35277486"],"doi":["10.1038/s41467-022-28922-4"]}}