{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Meng L"],"funding":["National Natural Science Foundation of China","National Natural Science Foundation of China (National Science Foundation of China)"],"pagination":["1410"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8931007"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["13(1)"],"pubmed_abstract":["As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore's law."],"journal":["Nature communications"],"pubmed_title":["Dual-gated single-molecule field-effect transistors beyond Moore's law."],"pmcid":["PMC8931007"],"funding_grant_id":["21727806 and 21933001"],"pubmed_authors":["Norel L","Xin N","Meng S","Selvanathan P","Jia C","Guo X","Jiang H","Zhang M","Zhang Q","Hu C","Yan Z","Guo H","He X","Gu L","Meng L","Ji Y","Rigaut S","Sabea HA"],"additional_accession":[]},"is_claimable":false,"name":"Dual-gated single-molecule field-effect transistors beyond Moore's law.","description":"As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore's law.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Mar","modification":"2025-04-04T03:20:06.346Z","creation":"2025-04-04T03:20:06.346Z"},"accession":"S-EPMC8931007","cross_references":{"pubmed":["35301285"],"doi":["10.1038/s41467-022-28999-x"]}}