biostudies-literatureMeng LNational Natural Science Foundation of ChinaNational Natural Science Foundation of China (National Science Foundation of China)1410https://www.ebi.ac.uk/biostudies/studies/S-EPMC8931007biostudies-literatureUnknown13(1)As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore's law.Nature communicationsDual-gated single-molecule field-effect transistors beyond Moore's law.PMC893100721727806 and 21933001Norel LXin NMeng SSelvanathan PJia CGuo XJiang HZhang MZhang QHu CYan ZGuo HHe XGu LMeng LJi YRigaut SSabea HAfalseDual-gated single-molecule field-effect transistors beyond Moore's law.As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore's law.2022-01-01T00:00:00Z2022 Mar2025-04-04T03:20:06.346Z2025-04-04T03:20:06.346ZS-EPMC89310073530128510.1038/s41467-022-28999-x