{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Xu J"],"funding":["Yong Liu"],"pagination":["1029"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8949618"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["12(6)"],"pubmed_abstract":["Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-doped NbOx:N films (thickness = approximately 15 nm) by pulsed laser deposition at 200 °C. N-doping significantly improved the on/off ratio, retention time, and stability of the Pt/NbOx:N/Pt devices, thus improving the stability of data storage. The Pt/NbOx:N/Pt devices also achieved lower and centralized switching voltage distribution. The improved performance was mainly attributed to the formation of oxygen vacancy (VO) + 2N clusters, which greatly reduced the ionic conductivity and total energ"],"journal":["Nanomaterials (Basel, Switzerland)"],"pubmed_title":["Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping."],"pmcid":["PMC8949618"],"funding_grant_id":["11804211","12074291","11905119"],"pubmed_authors":["Liu Y","Zou Z","Zhu Y","Ma H","Xiong R","Wang H","Xu J","Wu X"],"additional_accession":[]},"is_claimable":false,"name":"Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping.","description":"Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-doped NbOx:N films (thickness = approximately 15 nm) by pulsed laser deposition at 200 °C. N-doping significantly improved the on/off ratio, retention time, and stability of the Pt/NbOx:N/Pt devices, thus improving the stability of data storage. The Pt/NbOx:N/Pt devices also achieved lower and centralized switching voltage distribution. The improved performance was mainly attributed to the formation of oxygen vacancy (VO) + 2N clusters, which greatly reduced the ionic conductivity and total energ","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Mar","modification":"2025-04-22T01:47:30.07Z","creation":"2025-04-05T20:06:01.851Z"},"accession":"S-EPMC8949618","cross_references":{"pubmed":["35335842"],"doi":["10.3390/nano12061029"]}}