biostudies-literatureXu JYong Liu1029https://www.ebi.ac.uk/biostudies/studies/S-EPMC8949618biostudies-literatureUnknown12(6)Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-doped NbOx:N films (thickness = approximately 15 nm) by pulsed laser deposition at 200 °C. N-doping significantly improved the on/off ratio, retention time, and stability of the Pt/NbOx:N/Pt devices, thus improving the stability of data storage. The Pt/NbOx:N/Pt devices also achieved lower and centralized switching voltage distribution. The improved performance was mainly attributed to the formation of oxygen vacancy (VO) + 2N clusters, which greatly reduced the ionic conductivity and total energNanomaterials (Basel, Switzerland)Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping.PMC8949618118042111207429111905119Liu YZou ZZhu YMa HXiong RWang HXu JWu XfalseImproved Performance of NbOx Resistive Switching Memory by In-Situ N Doping.Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-doped NbOx:N films (thickness = approximately 15 nm) by pulsed laser deposition at 200 °C. N-doping significantly improved the on/off ratio, retention time, and stability of the Pt/NbOx:N/Pt devices, thus improving the stability of data storage. The Pt/NbOx:N/Pt devices also achieved lower and centralized switching voltage distribution. The improved performance was mainly attributed to the formation of oxygen vacancy (VO) + 2N clusters, which greatly reduced the ionic conductivity and total energ2022-01-01T00:00:00Z2022 Mar2025-04-22T01:47:30.07Z2025-04-05T20:06:01.851ZS-EPMC89496183533584210.3390/nano12061029