<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Ramaraj SG</submitter><funding>Japan Advanced Institute of Science and Technology</funding><funding>Japan Society for the Promotion of Science</funding><pagination>10492-10501</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC8973088</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>7(12)</volume><pubmed_abstract>Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS&lt;sub>2&lt;/sub> 2D materials have gained significant attention in gas sensing owing to their high surface-to-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS&lt;sub>2&lt;/sub> gas sensor synthesized through physical vapor deposition (PVD) toward NO&lt;sub>2&lt;/sub> at different temperatures. The electronic states of MoS&lt;sub>2&lt;/sub> and Nb-doped MOS&lt;sub>2&lt;/sub> monolayers grown by PVD were analyzed based on their work </pubmed_abstract><journal>ACS omega</journal><pubmed_title>RF Sputtered Nb-Doped MoS&lt;sub>2&lt;/sub> Thin Film for Effective Detection of NO&lt;sub>2&lt;/sub> Gas Molecules: Theoretical and Experimental Studies.</pubmed_title><pmcid>PMC8973088</pmcid><funding_grant_id>21K14510</funding_grant_id><pubmed_authors>Kim SW</pubmed_authors><pubmed_authors>Mizuta H</pubmed_authors><pubmed_authors>Nundy S</pubmed_authors><pubmed_authors>Zhao P</pubmed_authors><pubmed_authors>Elamaran D</pubmed_authors><pubmed_authors>Ramaraj SG</pubmed_authors><pubmed_authors>Muruganathan M</pubmed_authors><pubmed_authors>Tahir AA</pubmed_authors><pubmed_authors>Hayakawa Y</pubmed_authors></additional><is_claimable>false</is_claimable><name>RF Sputtered Nb-Doped MoS&lt;sub>2&lt;/sub> Thin Film for Effective Detection of NO&lt;sub>2&lt;/sub> Gas Molecules: Theoretical and Experimental Studies.</name><description>Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS&lt;sub>2&lt;/sub> 2D materials have gained significant attention in gas sensing owing to their high surface-to-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS&lt;sub>2&lt;/sub> gas sensor synthesized through physical vapor deposition (PVD) toward NO&lt;sub>2&lt;/sub> at different temperatures. The electronic states of MoS&lt;sub>2&lt;/sub> and Nb-doped MOS&lt;sub>2&lt;/sub> monolayers grown by PVD were analyzed based on their work </description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Mar</publication><modification>2025-04-05T15:52:35.583Z</modification><creation>2025-04-05T15:52:35.583Z</creation></dates><accession>S-EPMC8973088</accession><cross_references><pubmed>35382281</pubmed><doi>10.1021/acsomega.1c07274</doi></cross_references></HashMap>