{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Cai X"],"funding":["Research Grants Council, University Grants Committee","Research Grants Council, University Grants Committee (RGC, UGC)"],"pagination":["1777"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8976069"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["13(1)"],"pubmed_abstract":["Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the low contact resistance (down to 90 Ωµm in MoS<sub>2</s"],"journal":["Nature communications"],"pubmed_title":["Bridging the gap between atomically thin semiconductors and metal leads."],"pmcid":["PMC8976069"],"funding_grant_id":["AoE/P-701/20, C7036-17W, 16303720 and C6025-19G"],"pubmed_authors":["Cheng C","Liu J","Shi R","Feng X","An L","Han X","Hua M","Han T","Wang J","He P","Wu Z","Wang N","Pan D","Xu S","Ying Z","Cai Y","Chen Y","Lin J","Cai X"],"additional_accession":[]},"is_claimable":false,"name":"Bridging the gap between atomically thin semiconductors and metal leads.","description":"Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the low contact resistance (down to 90 Ωµm in MoS<sub>2</s","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Apr","modification":"2025-04-04T19:41:32.756Z","creation":"2025-04-04T19:41:32.756Z"},"accession":"S-EPMC8976069","cross_references":{"pubmed":["35365627"],"doi":["10.1038/s41467-022-29449-4"]}}