{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Zhang X"],"funding":["National Natural Science Foundation of China","Youth Innovation Promotion Association of the Chinese Academy of Sciences","West Light Foundation of the Chinese Academy of Sciences"],"pagination":["2454-2461"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8979095"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["12(4)"],"pubmed_abstract":["A series of <i>in situ</i> high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS<sub>2</sub> under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural-electronic transition in SnS<sub>2</sub> occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E<sub>g</sub> mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural-electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS<sub>2</sub> decreased slowly with increasing pressure and it closed in the pressure range of 30-40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural-electronic transition was reversible, which was further confirmed by our HRTEM observations."],"journal":["RSC advances"],"pubmed_title":["Pressure-induced coupled structural-electronic transition in SnS<sub>2</sub> under different hydrostatic environments up to 39.7 GPa."],"pmcid":["PMC8979095"],"funding_grant_id":["41774099","42072055","2019390","41772042"],"pubmed_authors":["Hong M","Dai L","Li C","Zhang X","Hu H"],"additional_accession":[]},"is_claimable":false,"name":"Pressure-induced coupled structural-electronic transition in SnS<sub>2</sub> under different hydrostatic environments up to 39.7 GPa.","description":"A series of <i>in situ</i> high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS<sub>2</sub> under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural-electronic transition in SnS<sub>2</sub> occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E<sub>g</sub> mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural-electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS<sub>2</sub> decreased slowly with increasing pressure and it closed in the pressure range of 30-40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural-electronic transition was reversible, which was further confirmed by our HRTEM observations.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Jan","modification":"2025-04-19T12:58:31.136Z","creation":"2025-04-19T12:58:31.136Z"},"accession":"S-EPMC8979095","cross_references":{"pubmed":["35425242"],"doi":["10.1039/d1ra08632d"]}}