biostudies-literatureZhang XNational Natural Science Foundation of ChinaYouth Innovation Promotion Association of the Chinese Academy of SciencesWest Light Foundation of the Chinese Academy of Sciences2454-2461https://www.ebi.ac.uk/biostudies/studies/S-EPMC8979095biostudies-literatureUnknown12(4)A series of <i>in situ</i> high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS₂ under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural-electronic transition in SnS₂ occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E_g mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural-electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS₂ decreased slowly with increasing pressure and it closed in the pressure range of 30-40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural-electronic transition was reversible, which was further confirmed by our HRTEM observations.RSC advancesPressure-induced coupled structural-electronic transition in SnS₂ under different hydrostatic environments up to 39.7 GPa.PMC89790954177409942072055201939041772042Hong MDai LLi CZhang XHu HfalsePressure-induced coupled structural-electronic transition in SnS₂ under different hydrostatic environments up to 39.7 GPa.A series of <i>in situ</i> high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS₂ under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural-electronic transition in SnS₂ occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E_g mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural-electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS₂ decreased slowly with increasing pressure and it closed in the pressure range of 30-40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural-electronic transition was reversible, which was further confirmed by our HRTEM observations.2022-01-01T00:00:00Z2022 Jan2025-04-19T12:58:31.136Z2025-04-19T12:58:31.136ZS-EPMC89790953542524210.1039/d1ra08632d