{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Afzal AM"],"funding":["King Khalid University"],"pagination":["1278-1286"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8979185"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["12(3)"],"pubmed_abstract":["Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current-voltage (<i>I</i> <sub>ds</sub>-<i>V</i> <sub>ds</sub>) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS<sub>2</sub>) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeS"],"journal":["RSC advances"],"pubmed_title":["High performance and gate-controlled GeSe/HfS<sub>2</sub> negative differential resistance device."],"pmcid":["PMC8979185"],"funding_grant_id":["R.G.P.2/170/42"],"pubmed_authors":["Iqbal MZ","Afzal AM","Abbas T","Javed Y","Neffati R","Shad NA","Iqbal MW","Dastgeer G","Sajid MM","Alomayri T","Khan R","Khan QU"],"additional_accession":[]},"is_claimable":false,"name":"High performance and gate-controlled GeSe/HfS<sub>2</sub> negative differential resistance device.","description":"Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current-voltage (<i>I</i> <sub>ds</sub>-<i>V</i> <sub>ds</sub>) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS<sub>2</sub>) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeS","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Jan","modification":"2025-04-19T13:01:06.775Z","creation":"2025-04-19T13:01:06.775Z"},"accession":"S-EPMC8979185","cross_references":{"pubmed":["35425203"],"doi":["10.1039/d1ra07276e"]}}