<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Afzal AM</submitter><funding>King Khalid University</funding><pagination>1278-1286</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC8979185</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>12(3)</volume><pubmed_abstract>Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current-voltage (&lt;i>I&lt;/i> &lt;sub>ds&lt;/sub>-&lt;i>V&lt;/i> &lt;sub>ds&lt;/sub>) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS&lt;sub>2&lt;/sub>) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeS</pubmed_abstract><journal>RSC advances</journal><pubmed_title>High performance and gate-controlled GeSe/HfS&lt;sub>2&lt;/sub> negative differential resistance device.</pubmed_title><pmcid>PMC8979185</pmcid><funding_grant_id>R.G.P.2/170/42</funding_grant_id><pubmed_authors>Iqbal MZ</pubmed_authors><pubmed_authors>Afzal AM</pubmed_authors><pubmed_authors>Abbas T</pubmed_authors><pubmed_authors>Javed Y</pubmed_authors><pubmed_authors>Neffati R</pubmed_authors><pubmed_authors>Shad NA</pubmed_authors><pubmed_authors>Iqbal MW</pubmed_authors><pubmed_authors>Dastgeer G</pubmed_authors><pubmed_authors>Sajid MM</pubmed_authors><pubmed_authors>Alomayri T</pubmed_authors><pubmed_authors>Khan R</pubmed_authors><pubmed_authors>Khan QU</pubmed_authors></additional><is_claimable>false</is_claimable><name>High performance and gate-controlled GeSe/HfS&lt;sub>2&lt;/sub> negative differential resistance device.</name><description>Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current-voltage (&lt;i>I&lt;/i> &lt;sub>ds&lt;/sub>-&lt;i>V&lt;/i> &lt;sub>ds&lt;/sub>) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS&lt;sub>2&lt;/sub>) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeS</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Jan</publication><modification>2025-04-19T13:01:06.775Z</modification><creation>2025-04-19T13:01:06.775Z</creation></dates><accession>S-EPMC8979185</accession><cross_references><pubmed>35425203</pubmed><doi>10.1039/d1ra07276e</doi></cross_references></HashMap>