{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Liu Y"],"funding":["Fundamental Research Funds for the Central Universities","Science, Technology and Innovation Commission of Shenzhen Municipality","National Natural Science Foundation of China","Natural Science Foundation of Hunan Province"],"pagination":["104109"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC8983347"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["25(4)"],"pubmed_abstract":["Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)<sub>2</sub>SnI<sub>4</sub> by incorporating SnI<sub>4</sub> in the precursor solutions. It is observed that Sn<sup>4+</sup> produces p-doping effect on the perovskite, which increases the electrical conductivity by 10<sup>5</sup> times. The dopant SnI<sub>4</sub> is also found to improve the film morphology of (PEA)<sub>2</sub>SnI<sub>4</sub>, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)<sub>2</sub>SnI<sub>4</sub> field-effect transistors from 0.25 to 0.68 cm<sup>2</su"],"journal":["iScience"],"pubmed_title":["Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices."],"pmcid":["PMC8983347"],"funding_grant_id":["U21A20497","2019GK2245","62074054","RCYX20200714114537036","2020JJ1002"],"pubmed_authors":["Jiang L","Hu Y","He M","Zeng Z","Hou S","Liu Y","Liao L","Qiu X","Xia J","Guo J","Xie H","Chen PA","Wei H","Wang X"],"additional_accession":[]},"is_claimable":false,"name":"Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices.","description":"Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)<sub>2</sub>SnI<sub>4</sub> by incorporating SnI<sub>4</sub> in the precursor solutions. It is observed that Sn<sup>4+</sup> produces p-doping effect on the perovskite, which increases the electrical conductivity by 10<sup>5</sup> times. The dopant SnI<sub>4</sub> is also found to improve the film morphology of (PEA)<sub>2</sub>SnI<sub>4</sub>, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)<sub>2</sub>SnI<sub>4</sub> field-effect transistors from 0.25 to 0.68 cm<sup>2</su","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Apr","modification":"2026-06-18T06:00:15.212Z","creation":"2025-04-05T16:00:17.461Z"},"accession":"S-EPMC8983347","cross_references":{"pubmed":["35402868"],"doi":["10.1016/j.isci.2022.104109"]}}