biostudies-literatureLiu YFundamental Research Funds for the Central UniversitiesScience, Technology and Innovation Commission of Shenzhen MunicipalityNational Natural Science Foundation of ChinaNatural Science Foundation of Hunan Province104109https://www.ebi.ac.uk/biostudies/studies/S-EPMC8983347biostudies-literatureUnknown25(4)Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)₂SnI₄ by incorporating SnI₄ in the precursor solutions. It is observed that Sn⁴⁺ produces p-doping effect on the perovskite, which increases the electrical conductivity by 10⁵ times. The dopant SnI₄ is also found to improve the film morphology of (PEA)₂SnI₄, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)₂SnI₄ field-effect transistors from 0.25 to 0.68 cm<sup>2</suiScienceDoping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices.PMC8983347U21A204972019GK224562074054RCYX202007141145370362020JJ1002Jiang LHu YHe MZeng ZHou SLiu YLiao LQiu XXia JGuo JXie HChen PAWei HWang XfalseDoping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices.Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)₂SnI₄ by incorporating SnI₄ in the precursor solutions. It is observed that Sn⁴⁺ produces p-doping effect on the perovskite, which increases the electrical conductivity by 10⁵ times. The dopant SnI₄ is also found to improve the film morphology of (PEA)₂SnI₄, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)₂SnI₄ field-effect transistors from 0.25 to 0.68 cm<sup>2</su2022-01-01T00:00:00Z2022 Apr2026-06-18T06:00:15.212Z2025-04-05T16:00:17.461ZS-EPMC89833473540286810.1016/j.isci.2022.104109