{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Wang R"],"funding":["Chinese Academy of Sciences","National Natural Science Foundation of China","National Key Research and Development Program of China"],"pagination":["18241-18245"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9033434"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["11(30)"],"pubmed_abstract":["In this work, we demonstrate that a Ta/TaO <sub><i>x</i></sub> /Ru device can act as both a highly uniform and nonlinear selection device and a stable resistive switching device, respectively, by controlling the voltage applied to the Ta electrode. As a selection device, it shows high selectivity (10<sup>3</sup>), high current density (25 kA cm<sup>-2</sup>), very low variation, and good endurance. The non-linear performance of the device may be attributed to a trapezoidal band structure modulated by the concentration gradient of oxygen vacancies. Furthermore, with a large voltage bias on the Ta electrode, a repeatable and stable resistive switching behavior was observed, which could be attributed to the formation of conductive filaments probably composed of Ta metal and oxygen vacancies. "],"journal":["RSC advances"],"pubmed_title":["A dual-functional Ta/TaO <sub><i>x</i></sub> /Ru device with both nonlinear selector and resistive switching behaviors."],"pmcid":["PMC9033434"],"funding_grant_id":["2018AAA0103300","U20A20220","61804171","XDB44000000"],"pubmed_authors":["Wu Z","Wang R","Zhang X","Liu Q","Shi T"],"additional_accession":[]},"is_claimable":false,"name":"A dual-functional Ta/TaO <sub><i>x</i></sub> /Ru device with both nonlinear selector and resistive switching behaviors.","description":"In this work, we demonstrate that a Ta/TaO <sub><i>x</i></sub> /Ru device can act as both a highly uniform and nonlinear selection device and a stable resistive switching device, respectively, by controlling the voltage applied to the Ta electrode. As a selection device, it shows high selectivity (10<sup>3</sup>), high current density (25 kA cm<sup>-2</sup>), very low variation, and good endurance. The non-linear performance of the device may be attributed to a trapezoidal band structure modulated by the concentration gradient of oxygen vacancies. Furthermore, with a large voltage bias on the Ta electrode, a repeatable and stable resistive switching behavior was observed, which could be attributed to the formation of conductive filaments probably composed of Ta metal and oxygen vacancies. ","dates":{"release":"2021-01-01T00:00:00Z","publication":"2021 May","modification":"2025-04-20T03:08:03.84Z","creation":"2025-04-20T03:08:03.84Z"},"accession":"S-EPMC9033434","cross_references":{"pubmed":["35480948"],"doi":["10.1039/d1ra02350k"]}}