<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Wang R</submitter><funding>Chinese Academy of Sciences</funding><funding>National Natural Science Foundation of China</funding><funding>National Key Research and Development Program of China</funding><pagination>18241-18245</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9033434</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>11(30)</volume><pubmed_abstract>In this work, we demonstrate that a Ta/TaO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> /Ru device can act as both a highly uniform and nonlinear selection device and a stable resistive switching device, respectively, by controlling the voltage applied to the Ta electrode. As a selection device, it shows high selectivity (10&lt;sup>3&lt;/sup>), high current density (25 kA cm&lt;sup>-2&lt;/sup>), very low variation, and good endurance. The non-linear performance of the device may be attributed to a trapezoidal band structure modulated by the concentration gradient of oxygen vacancies. Furthermore, with a large voltage bias on the Ta electrode, a repeatable and stable resistive switching behavior was observed, which could be attributed to the formation of conductive filaments probably composed of Ta metal and oxygen vacancies. </pubmed_abstract><journal>RSC advances</journal><pubmed_title>A dual-functional Ta/TaO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> /Ru device with both nonlinear selector and resistive switching behaviors.</pubmed_title><pmcid>PMC9033434</pmcid><funding_grant_id>2018AAA0103300</funding_grant_id><funding_grant_id>U20A20220</funding_grant_id><funding_grant_id>61804171</funding_grant_id><funding_grant_id>XDB44000000</funding_grant_id><pubmed_authors>Wu Z</pubmed_authors><pubmed_authors>Wang R</pubmed_authors><pubmed_authors>Zhang X</pubmed_authors><pubmed_authors>Liu Q</pubmed_authors><pubmed_authors>Shi T</pubmed_authors></additional><is_claimable>false</is_claimable><name>A dual-functional Ta/TaO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> /Ru device with both nonlinear selector and resistive switching behaviors.</name><description>In this work, we demonstrate that a Ta/TaO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> /Ru device can act as both a highly uniform and nonlinear selection device and a stable resistive switching device, respectively, by controlling the voltage applied to the Ta electrode. As a selection device, it shows high selectivity (10&lt;sup>3&lt;/sup>), high current density (25 kA cm&lt;sup>-2&lt;/sup>), very low variation, and good endurance. The non-linear performance of the device may be attributed to a trapezoidal band structure modulated by the concentration gradient of oxygen vacancies. Furthermore, with a large voltage bias on the Ta electrode, a repeatable and stable resistive switching behavior was observed, which could be attributed to the formation of conductive filaments probably composed of Ta metal and oxygen vacancies. </description><dates><release>2021-01-01T00:00:00Z</release><publication>2021 May</publication><modification>2025-04-20T03:08:03.84Z</modification><creation>2025-04-20T03:08:03.84Z</creation></dates><accession>S-EPMC9033434</accession><cross_references><pubmed>35480948</pubmed><doi>10.1039/d1ra02350k</doi></cross_references></HashMap>