<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Han H</submitter><funding>Agencia Estatal de Investigaci??n</funding><funding>Alexander von Humboldt-Stiftung</funding><funding>Horizon 2020</funding><pagination>6206-6214</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9047007</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>16(4)</volume><pubmed_abstract>Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO&lt;sub>3-δ&lt;/sub> (&lt;i>P-&lt;/i>SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO&lt;sub>2.5&lt;/sub> (&lt;i>BM-&lt;/i>SCO), is insulating and an antiferromagnet. Moreover, &lt;i>BM-&lt;/i>SCO exhibits oxygen vacancy channels (OVCs) that in thin films can be oriented either horizontally (&lt;i>H&lt;/i>-SCO) or vertically (&lt;i>V&lt;/i>-SCO) to the film's surface. To date, the orientation of these OVCs has been manipulated by control of the thin film deposition parameters or by using a substrate-induced strain. Here, we present a method to electrically control the OVC ordering in thin layers via ionic liquid gating (ILG). We show </pubmed_abstract><journal>ACS nano</journal><pubmed_title>Control of Oxygen Vacancy Ordering in Brownmillerite Thin Films via Ionic Liquid Gating.</pubmed_title><pmcid>PMC9047007</pmcid><funding_grant_id>PID2020-116181RB-C32</funding_grant_id><funding_grant_id>PCI2019-111908-2</funding_grant_id><funding_grant_id>Alexander von Humboldt Professorship</funding_grant_id><funding_grant_id>737109</funding_grant_id><pubmed_authors>Yoon J</pubmed_authors><pubmed_authors>Sharma A</pubmed_authors><pubmed_authors>Parkin SSP</pubmed_authors><pubmed_authors>Meyerheim HL</pubmed_authors><pubmed_authors>Deniz H</pubmed_authors><pubmed_authors>Jeon KR</pubmed_authors><pubmed_authors>Han H</pubmed_authors><pubmed_authors>Gargiani P</pubmed_authors><pubmed_authors>Guillemard C</pubmed_authors><pubmed_authors>Sharma AK</pubmed_authors><pubmed_authors>Mohseni K</pubmed_authors><pubmed_authors>Valvidares M</pubmed_authors></additional><is_claimable>false</is_claimable><name>Control of Oxygen Vacancy Ordering in Brownmillerite Thin Films via Ionic Liquid Gating.</name><description>Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO&lt;sub>3-δ&lt;/sub> (&lt;i>P-&lt;/i>SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO&lt;sub>2.5&lt;/sub> (&lt;i>BM-&lt;/i>SCO), is insulating and an antiferromagnet. Moreover, &lt;i>BM-&lt;/i>SCO exhibits oxygen vacancy channels (OVCs) that in thin films can be oriented either horizontally (&lt;i>H&lt;/i>-SCO) or vertically (&lt;i>V&lt;/i>-SCO) to the film's surface. To date, the orientation of these OVCs has been manipulated by control of the thin film deposition parameters or by using a substrate-induced strain. Here, we present a method to electrically control the OVC ordering in thin layers via ionic liquid gating (ILG). We show </description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Apr</publication><modification>2025-04-25T23:00:29.979Z</modification><creation>2025-04-06T09:13:43.743Z</creation></dates><accession>S-EPMC9047007</accession><cross_references><pubmed>35377608</pubmed><doi>10.1021/acsnano.2c00012</doi></cross_references></HashMap>