<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>10(71)</volume><submitter>Kim SK</submitter><funding>Korea Electric Power Corporation</funding><pubmed_abstract>We compared nickel oxide (NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> ) deposited by thermal evaporation and that deposited by the spin-coating process, for use in the hole transport layers of inverted planar perovskite solar cells (PSCs). Spin-coating deposition for NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> HTL has been widely used, owing to its simplicity, low cost, and high efficiency. However, the spin-coating process has a technical limit to depositing a large-area uniformly. In contrast, thermal evaporation fabrication has a low price and is able to produce uniform and reproducible thin film. Hence, the chemical states, energy band alignment, surface morphologies, and microstructures of NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> deposited by spin coating and thermal evaporation were analyzed. The PSC with NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> HTL deposited by thermal evaporation showed a higher power conversion efficiency of 16.64% with open circuit voltage 1.07 V, short circuit current density of 20.68 mA cm&lt;sup>-2&lt;/sup>, and a fill factor of 75.51% compared to that of PSC with spin-coated NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> . We confirmed that thermal evaporation can deposit NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> to give a better performance as a HTL with higher reproducibility than spin-coating.</pubmed_abstract><journal>RSC advances</journal><pagination>43847-43852</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9058328</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Comparison of NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> thin film deposited by spin-coating or thermal evaporation for application as a hole transport layer of perovskite solar cells.</pubmed_title><pmcid>PMC9058328</pmcid><pubmed_authors>Kim DH</pubmed_authors><pubmed_authors>Choi DH</pubmed_authors><pubmed_authors>Kim HK</pubmed_authors><pubmed_authors>Kim SC</pubmed_authors><pubmed_authors>Seok HJ</pubmed_authors><pubmed_authors>Kim SK</pubmed_authors><pubmed_authors>Nam SJ</pubmed_authors></additional><is_claimable>false</is_claimable><name>Comparison of NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> thin film deposited by spin-coating or thermal evaporation for application as a hole transport layer of perovskite solar cells.</name><description>We compared nickel oxide (NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> ) deposited by thermal evaporation and that deposited by the spin-coating process, for use in the hole transport layers of inverted planar perovskite solar cells (PSCs). Spin-coating deposition for NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> HTL has been widely used, owing to its simplicity, low cost, and high efficiency. However, the spin-coating process has a technical limit to depositing a large-area uniformly. In contrast, thermal evaporation fabrication has a low price and is able to produce uniform and reproducible thin film. Hence, the chemical states, energy band alignment, surface morphologies, and microstructures of NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> deposited by spin coating and thermal evaporation were analyzed. The PSC with NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> HTL deposited by thermal evaporation showed a higher power conversion efficiency of 16.64% with open circuit voltage 1.07 V, short circuit current density of 20.68 mA cm&lt;sup>-2&lt;/sup>, and a fill factor of 75.51% compared to that of PSC with spin-coated NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> . We confirmed that thermal evaporation can deposit NiO &lt;sub>&lt;i>x&lt;/i>&lt;/sub> to give a better performance as a HTL with higher reproducibility than spin-coating.</description><dates><release>2020-01-01T00:00:00Z</release><publication>2020 Nov</publication><modification>2025-05-18T12:06:42.617Z</modification><creation>2025-04-06T22:55:28.497Z</creation></dates><accession>S-EPMC9058328</accession><cross_references><pubmed>35519689</pubmed><doi>10.1039/d0ra08776a</doi></cross_references></HashMap>