{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Tuktarov AR"],"funding":["Russian Foundation for Basic Research"],"pagination":["7505-7508"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9061209"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["9(13)"],"pubmed_abstract":["Photocontrolled organic field-effect transistors (OFETs) containing a hybrid compound of fullerene C<sub>60</sub> (n-semiconductor) with spiropyran (electrical conductivity photocontroller) as the active layer were fabricated for the first time. It was found that an OFET based on the hybrid compound, unlike the multilayer transistor (a device based on unmodified fullerene C<sub>60</sub> and spiropyran in different layers), has higher transfer characteristics (source-to-drain current), charge carrier mobility in the active layer, and response rate to external influence, which makes them promising materials for the manufacture of optical memory elements."],"journal":["RSC advances"],"pubmed_title":["Photocontrolled organic field effect transistors based on the fullerene C<sub>60</sub> and spiropyran hybrid molecule."],"pmcid":["PMC9061209"],"funding_grant_id":["18-33-20027"],"pubmed_authors":["Khuzin AA","Mullagaliev IN","Safargalin IN","Salikhov RB","Dzhemilev UM","Tuktarov AR","Popod'ko NR"],"additional_accession":[]},"is_claimable":false,"name":"Photocontrolled organic field effect transistors based on the fullerene C<sub>60</sub> and spiropyran hybrid molecule.","description":"Photocontrolled organic field-effect transistors (OFETs) containing a hybrid compound of fullerene C<sub>60</sub> (n-semiconductor) with spiropyran (electrical conductivity photocontroller) as the active layer were fabricated for the first time. It was found that an OFET based on the hybrid compound, unlike the multilayer transistor (a device based on unmodified fullerene C<sub>60</sub> and spiropyran in different layers), has higher transfer characteristics (source-to-drain current), charge carrier mobility in the active layer, and response rate to external influence, which makes them promising materials for the manufacture of optical memory elements.","dates":{"release":"2019-01-01T00:00:00Z","publication":"2019 Mar","modification":"2025-04-04T23:17:13.731Z","creation":"2025-04-04T23:17:13.731Z"},"accession":"S-EPMC9061209","cross_references":{"pubmed":["35519944"],"doi":["10.1039/c9ra00939f"]}}