{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Qi J"],"funding":["National Natural Science Foundation of China"],"pagination":["15629-15634"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9064341"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["9(27)"],"pubmed_abstract":["Bismuth vanadate photoanode has shown great potential for photoelectrochemical (PEC) catalysis, but it needs to be further modified because of its relatively low charge-separation efficiency and poor stability. Herein, the bimetallic phosphide NiCoP decorated Mo-BiVO<sub>4</sub> is fabricated through the electrodeposition and drop-casting method, which significantly improves the charge separation and surface oxidation reaction. Therefore, the fabricated NiCoP/Mo-BiVO<sub>4</sub> photoanode exhibits a low onset potential of 0.21 V (<i>vs.</i> RHE) and high photocurrent of 3.21 mA cm<sup>-2</sup> at 1.23 V (<i>vs.</i> RHE), which is 3.12 times higher than that of pure BiVO<sub>4</sub>. Importantly, the decoration of NiCoP significantly improve the stability of BiVO<sub>4</sub> photoanode."],"journal":["RSC advances"],"pubmed_title":["Bimetallic phosphide decorated Mo-BiVO<sub>4</sub> for significantly improved photoelectrochemical activity and stability."],"pmcid":["PMC9064341"],"funding_grant_id":["21676193","21506156"],"pubmed_authors":["Qi J","Zou JJ","Zhang X","Kong D","Chen Y","Liu D","Pan L"],"additional_accession":[]},"is_claimable":false,"name":"Bimetallic phosphide decorated Mo-BiVO<sub>4</sub> for significantly improved photoelectrochemical activity and stability.","description":"Bismuth vanadate photoanode has shown great potential for photoelectrochemical (PEC) catalysis, but it needs to be further modified because of its relatively low charge-separation efficiency and poor stability. Herein, the bimetallic phosphide NiCoP decorated Mo-BiVO<sub>4</sub> is fabricated through the electrodeposition and drop-casting method, which significantly improves the charge separation and surface oxidation reaction. Therefore, the fabricated NiCoP/Mo-BiVO<sub>4</sub> photoanode exhibits a low onset potential of 0.21 V (<i>vs.</i> RHE) and high photocurrent of 3.21 mA cm<sup>-2</sup> at 1.23 V (<i>vs.</i> RHE), which is 3.12 times higher than that of pure BiVO<sub>4</sub>. Importantly, the decoration of NiCoP significantly improve the stability of BiVO<sub>4</sub> photoanode.","dates":{"release":"2019-01-01T00:00:00Z","publication":"2019 May","modification":"2025-04-04T12:43:21.147Z","creation":"2025-04-04T12:43:21.147Z"},"accession":"S-EPMC9064341","cross_references":{"pubmed":["35514825"],"doi":["10.1039/c9ra02105a"]}}