<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Jeong H</submitter><funding>National Research Foundation of Korea</funding><funding>National Science Foundation</funding><funding>Office of Naval Research</funding><pagination>20871-20878</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9065771</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>9(36)</volume><pubmed_abstract>The demand for large-area, high-quality synthesis of graphene with chemical vapor deposition (CVD) has increased for the realization of next-generation transparent and flexible optoelectronic applications. In conventional CVD processes, various synthesis parameters can strongly affect the quality of the resultant graphene. In particular, surface engineering of a copper catalyst substrate is one of the most promising pathways for achieving high-quality graphene with excellent reproducibility. For this purpose, simple wet chemical etching of a catalyst substrate without toxic fume byproducts or metal ion residues is desired. Here, we suggest a facile method for preparing a pretreated copper catalyst substrate for highly uniform, large-area CVD graphene growth. This pretreatment method involv</pubmed_abstract><journal>RSC advances</journal><pubmed_title>Highly uniform monolayer graphene synthesis &lt;i>via&lt;/i> a facile pretreatment of copper catalyst substrates using an ammonium persulfate solution.</pubmed_title><pmcid>PMC9065771</pmcid><funding_grant_id>N000141612685</funding_grant_id><funding_grant_id>CBET-1605338</funding_grant_id><funding_grant_id>NRF-2017R1C1B2002323</funding_grant_id><funding_grant_id>2012026372</funding_grant_id><pubmed_authors>Hihath J</pubmed_authors><pubmed_authors>Chung S</pubmed_authors><pubmed_authors>Jeong H</pubmed_authors><pubmed_authors>Kim JK</pubmed_authors><pubmed_authors>Kim Y</pubmed_authors><pubmed_authors>Lee T</pubmed_authors><pubmed_authors>Hwang WT</pubmed_authors><pubmed_authors>Song Y</pubmed_authors></additional><is_claimable>false</is_claimable><name>Highly uniform monolayer graphene synthesis &lt;i>via&lt;/i> a facile pretreatment of copper catalyst substrates using an ammonium persulfate solution.</name><description>The demand for large-area, high-quality synthesis of graphene with chemical vapor deposition (CVD) has increased for the realization of next-generation transparent and flexible optoelectronic applications. In conventional CVD processes, various synthesis parameters can strongly affect the quality of the resultant graphene. In particular, surface engineering of a copper catalyst substrate is one of the most promising pathways for achieving high-quality graphene with excellent reproducibility. For this purpose, simple wet chemical etching of a catalyst substrate without toxic fume byproducts or metal ion residues is desired. Here, we suggest a facile method for preparing a pretreated copper catalyst substrate for highly uniform, large-area CVD graphene growth. This pretreatment method involv</description><dates><release>2019-01-01T00:00:00Z</release><publication>2019 Jul</publication><modification>2025-04-18T14:15:10.507Z</modification><creation>2025-04-07T00:19:45.096Z</creation></dates><accession>S-EPMC9065771</accession><cross_references><pubmed>35515571</pubmed><doi>10.1039/c9ra02689d</doi></cross_references></HashMap>