{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Chien PJ"],"funding":["Ministry of Science and Technology, Taiwan"],"pagination":["26037-26042"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9070120"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["9(45)"],"pubmed_abstract":["Herein, the universal luminescence characteristics of porous Si nanowire arrays were exploited using a wide range of doping types and concentrations; we found that the dual-band photoluminescence intensities were correlated with the formation rates of Si nanowires with porous features; however, these intensities exhibited no evident dependence on the doping conditions. Furthermore, we demonstrated a facile and reliable transfer method implementing the freestanding Si nanowire arrays while maintaining the robust photoluminescence behaviors under bending conditions. The fabrication protocol, involving lateral etching locally at the nanowire ends, enabled the controlled formation of uniform and large-area transferred nanowires with vertical regularity. Without the additional deposition of Ag "],"journal":["RSC advances"],"pubmed_title":["Self-formed silver nanoparticles on freestanding silicon nanowire arrays featuring SERS performances."],"pmcid":["PMC9070120"],"funding_grant_id":["MOST 107-3017-F-006-003","MOST 107-2221-E-006-013-MY3"],"pubmed_authors":["Duong HP","Chen CY","Chien PJ","Tsai KH","Zhou Y"],"additional_accession":[]},"is_claimable":false,"name":"Self-formed silver nanoparticles on freestanding silicon nanowire arrays featuring SERS performances.","description":"Herein, the universal luminescence characteristics of porous Si nanowire arrays were exploited using a wide range of doping types and concentrations; we found that the dual-band photoluminescence intensities were correlated with the formation rates of Si nanowires with porous features; however, these intensities exhibited no evident dependence on the doping conditions. Furthermore, we demonstrated a facile and reliable transfer method implementing the freestanding Si nanowire arrays while maintaining the robust photoluminescence behaviors under bending conditions. The fabrication protocol, involving lateral etching locally at the nanowire ends, enabled the controlled formation of uniform and large-area transferred nanowires with vertical regularity. Without the additional deposition of Ag ","dates":{"release":"2019-01-01T00:00:00Z","publication":"2019 Aug","modification":"2025-04-26T04:33:28.237Z","creation":"2025-04-26T04:33:28.237Z"},"accession":"S-EPMC9070120","cross_references":{"pubmed":["35531020"],"doi":["10.1039/c9ra03273h"]}}