{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Wu J"],"funding":["Chinese Academy of Sciences","National Natural Science Foundation of China"],"pagination":["5721-5727"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9078233"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["8(11)"],"pubmed_abstract":["Organic optoelectronic devices, especially for OLEDs, are extremely susceptibility to water vapor and oxygen which limit their widespread commercialization. In order to extend the shelf-lifetime of devices, thin film encapsulation is the most promising and challenging encapsulation process. In this study, dyad-style multilayer encapsulation structures based on alternating Al<sub>2</sub>O<sub>3</sub> layer and parylene C have been discussed as gas diffusion barriers, in which dense and pinhole-free Al<sub>2</sub>O<sub>3</sub> films were grown by atomic layer deposition (ALD) and flexible parylene C layers were deposited by chemical vapor deposition (CVD). We found the particle in ALD deposited Al<sub>2</sub>O<sub>3</sub> films process is the key killer to barrier property. The thickness of "],"journal":["RSC advances"],"pubmed_title":["Efficient multi-barrier thin film encapsulation of OLED using alternating Al<sub>2</sub>O<sub>3</sub> and polymer layers."],"pmcid":["PMC9078233"],"funding_grant_id":["XDA09020201","U1605244"],"pubmed_authors":["Wu J","Nie S","Zhang D","Wei C","Cui Z","Fei F","Chen X","Su W"],"additional_accession":[]},"is_claimable":false,"name":"Efficient multi-barrier thin film encapsulation of OLED using alternating Al<sub>2</sub>O<sub>3</sub> and polymer layers.","description":"Organic optoelectronic devices, especially for OLEDs, are extremely susceptibility to water vapor and oxygen which limit their widespread commercialization. In order to extend the shelf-lifetime of devices, thin film encapsulation is the most promising and challenging encapsulation process. In this study, dyad-style multilayer encapsulation structures based on alternating Al<sub>2</sub>O<sub>3</sub> layer and parylene C have been discussed as gas diffusion barriers, in which dense and pinhole-free Al<sub>2</sub>O<sub>3</sub> films were grown by atomic layer deposition (ALD) and flexible parylene C layers were deposited by chemical vapor deposition (CVD). We found the particle in ALD deposited Al<sub>2</sub>O<sub>3</sub> films process is the key killer to barrier property. The thickness of ","dates":{"release":"2018-01-01T00:00:00Z","publication":"2018 Feb","modification":"2025-04-19T10:45:48.702Z","creation":"2024-11-14T03:45:04.582Z"},"accession":"S-EPMC9078233","cross_references":{"pubmed":["35539605"],"doi":["10.1039/c8ra00023a"]}}