{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Zhang X"],"funding":["Department of Education of Liaoning Province","National Natural Science Foundation of China"],"pagination":["15290-15296"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9082044"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["8(28)"],"pubmed_abstract":["In this work, an ultraviolet (UV) photodetector based on a ZnO nanowires (NWs) array with metal-semiconductor-metal Schottky junction structure was successfully fabricated on a flexible polyester fibre substrate by a low-temperature hydrothermal method. Subjected to a 0.2% tensile strain at -1 V, the <i>I</i> <sub>light</sub> and sensitivity of the as-prepared UV photodetector are lifted by 82% and 130%, respectively. Furthermore, the response speed and recovery speed are significantly raised under the same tensile strain. The working principle can be explained as that the Schottky barrier height (SBH) is effectively improved by the negative strain-induced polarization at the metal-ZnO interface which is favorable for the separation of photogenerated electron-hole pairs. This work not only"],"journal":["RSC advances"],"pubmed_title":["Enhancing performance of Ag-ZnO-Ag UV photodetector by piezo-phototronic effect."],"pmcid":["PMC9082044"],"funding_grant_id":["61504018","L2015040"],"pubmed_authors":["Qiu Y","Zhang X","Zhang H","Li B","Hu L","Yang D"],"additional_accession":[]},"is_claimable":false,"name":"Enhancing performance of Ag-ZnO-Ag UV photodetector by piezo-phototronic effect.","description":"In this work, an ultraviolet (UV) photodetector based on a ZnO nanowires (NWs) array with metal-semiconductor-metal Schottky junction structure was successfully fabricated on a flexible polyester fibre substrate by a low-temperature hydrothermal method. Subjected to a 0.2% tensile strain at -1 V, the <i>I</i> <sub>light</sub> and sensitivity of the as-prepared UV photodetector are lifted by 82% and 130%, respectively. Furthermore, the response speed and recovery speed are significantly raised under the same tensile strain. The working principle can be explained as that the Schottky barrier height (SBH) is effectively improved by the negative strain-induced polarization at the metal-ZnO interface which is favorable for the separation of photogenerated electron-hole pairs. This work not only","dates":{"release":"2018-01-01T00:00:00Z","publication":"2018 Apr","modification":"2025-04-05T13:24:33.435Z","creation":"2025-04-05T13:24:33.435Z"},"accession":"S-EPMC9082044","cross_references":{"pubmed":["35539496"],"doi":["10.1039/c8ra01189c"]}}