{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Hu L"],"funding":["Shenzhen technology research project","the Ministry of Education Industry-University Cooperation and Collaborative Education Project","Shenzhen Technology University School-Enterprise Cooperation Project","Guangdong Basic and Applied Basic Research Foundation"],"pagination":["1454"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9102924"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["12(9)"],"pubmed_abstract":["Highly luminescent FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer for perovskite light-emitting diodes (PeLEDs). Electrical tests indicate that the double hole-transport layers (HTLs) played an important role in improving the electrical-to-optical conversion efficiency of PeLEDs due to their cascade-like level alignment. The PeLED based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB)/poly(9-vinylcarbazole) (PVK) double HTLs produced a high external quantum efficiency (EQE) of 9%, which was"],"journal":["Nanomaterials (Basel, Switzerland)"],"pubmed_title":["Marked Efficiency Improvement of FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer."],"pmcid":["PMC9102924"],"funding_grant_id":["No.202002105037","(No. 2019A1515110230, 2021A1515012055","No. JSGG20201102162200002","No. 20211064010033"],"pubmed_authors":["Xiang B","Wang N","Cui X","Wang W","An H","Hu L","Wu D","Li B","Qiu M","Wang Z","Wang K","Ye Z"],"additional_accession":[]},"is_claimable":false,"name":"Marked Efficiency Improvement of FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer.","description":"Highly luminescent FAPb<sub>0.7</sub>Sn<sub>0.3</sub>Br<sub>3</sub> nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer for perovskite light-emitting diodes (PeLEDs). Electrical tests indicate that the double hole-transport layers (HTLs) played an important role in improving the electrical-to-optical conversion efficiency of PeLEDs due to their cascade-like level alignment. The PeLED based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB)/poly(9-vinylcarbazole) (PVK) double HTLs produced a high external quantum efficiency (EQE) of 9%, which was","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Apr","modification":"2025-04-04T22:54:09.085Z","creation":"2025-02-19T00:56:43.992Z"},"accession":"S-EPMC9102924","cross_references":{"pubmed":["35564163"],"doi":["10.3390/nano12091454"]}}