biostudies-literatureZhang SNational Key R&amp;D Program of ChinaNational Natural Science Foundation of China1638https://www.ebi.ac.uk/biostudies/studies/S-EPMC9147444biostudies-literatureUnknown12(10)Constant advance in improving the luminous efficacy (<i>η</i>_L) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this material system while reducing the costs. In this work, strategies of using thin AlN prebuffer and transitional-refraction-index patterned sapphire substrate (TPSS) were proposed, which pushed up the efficiency of white LEDs (WLEDs). The AlN prebuffer was obtained through physical vapor deposition (PVD) method and TPSS was fabricated by dry-etched periodic silica arrays covered on sapphire. Devices in mass production confirmed that PVD AlN prebuffer was able to improve the light output power (<i>φ</i>_e) of blue LEDs (BLEDs) Nanomaterials (Basel, Switzerland)High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate.PMC914744462174157 and 619741402017YFB0403100 and 2017YFB0403103Yi XLi JHuang JXu CZhang SYan YWang JLi YLiu ZLi ZLiang MFeng TZhu XfalseHigh Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate.Constant advance in improving the luminous efficacy (<i>η</i>_L) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this material system while reducing the costs. In this work, strategies of using thin AlN prebuffer and transitional-refraction-index patterned sapphire substrate (TPSS) were proposed, which pushed up the efficiency of white LEDs (WLEDs). The AlN prebuffer was obtained through physical vapor deposition (PVD) method and TPSS was fabricated by dry-etched periodic silica arrays covered on sapphire. Devices in mass production confirmed that PVD AlN prebuffer was able to improve the light output power (<i>φ</i>_e) of blue LEDs (BLEDs) 2022-01-01T00:00:00Z2022 May2025-04-04T10:42:29.013Z2025-04-04T10:42:29.013ZS-EPMC91474443563085910.3390/nano12101638