<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Talsma W</submitter><funding>China Scholarship Council</funding><funding>Science, Technology and Innovation Commission of Shenzhen Municipality</funding><funding>China Postdoctoral Science Foundation</funding><funding>National Natural Science Foundation of China</funding><funding>Zernike Institute for Advanced Materials, University of Groningen</funding><funding>Guangdong Science and Technology Department</funding><pagination>38056-38066</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9412849</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>14(33)</volume><pubmed_abstract>Conjugated polymers with narrow band gaps are particularly useful for sorting and discriminating semiconducting single-walled carbon nanotubes (s-SWCNT) due to the low charge carrier injection barrier for transport. In this paper, we report two newly synthesized narrow-band-gap conjugated polymers (&lt;b>PNDITEG-TVT&lt;/b> and &lt;b>PNDIC8TEG-TVT&lt;/b>) based on naphthalene diimide (NDI) and thienylennevinylene (TVT) building blocks, decorated with different polar side chains that can be used for dispersing and discriminating s-SWCNT. Compared with the mid-band-gap conjugated polymer &lt;b>PNDITEG-AH&lt;/b>, which is composed of naphthalene diimide (NDI) and head-to-head bithiophene building blocks, the addition of a vinylene linker eliminates the steric congestion present in head-to-head bithiophene, which promotes backbone planarity, extending the π-conjugation length and narrowing the band gap. Cyclic voltammetry (CV) and density functional theory (DFT) calculations suggest that inserting a vinylene group in a head-to-head bithiophene efficiently lifts the highest occupied molecular orbital (HOMO) level (-5.60 eV for &lt;b>PNDITEG-AH&lt;/b>, -5.02 eV for &lt;b>PNDITEG-TVT&lt;/b>, and -5.09 eV for &lt;b>PNDIC8TEG-TVT&lt;/b>). All three polymers are able to select for s-SWCNT, as evidenced by the sharp transitions in the absorption spectra. Field-effect transistors (FETs) fabricated with the polymer:SWCNT inks display p-dominant properties, with higher hole mobilities when using the NDI-TVT polymers as compared with &lt;b>PNDITEG-AH&lt;/b> (0.6 cm&lt;sup>2&lt;/sup> V&lt;sup>-1&lt;/sup> s&lt;sup>-1&lt;/sup> for HiPCO:&lt;b>PNDITEG-AH&lt;/b>, 1.5 cm&lt;sup>2&lt;/sup> V&lt;sup>-1&lt;/sup> s&lt;sup>-1&lt;/sup> for HiPCO:&lt;b>PNDITEG-TVT&lt;/b>, and 2.3 cm&lt;sup>2&lt;/sup> V&lt;sup>-1&lt;/sup> s&lt;sup>-1&lt;/sup> for HiPCO:&lt;b>PNDIC8TEG-TVT&lt;/b>). This improvement is due to the better alignment of the HOMO level of &lt;b>PNDITEG-TVT&lt;/b> and &lt;b>PNDIC8TEG-TVT&lt;/b> with that of the dominant SWCNT specie.</pubmed_abstract><journal>ACS applied materials &amp; interfaces</journal><pubmed_title>Efficient Selective Sorting of Semiconducting Carbon Nanotubes Using Ultra-Narrow-Band-Gap Polymers.</pubmed_title><pmcid>PMC9412849</pmcid><funding_grant_id>JCYJ20190808160207366</funding_grant_id><funding_grant_id>61775145</funding_grant_id><funding_grant_id>2020A1515110636</funding_grant_id><funding_grant_id>2020M672771</funding_grant_id><funding_grant_id>61620106016</funding_grant_id><funding_grant_id>JCYJ20210324095810028</funding_grant_id><funding_grant_id>61835009</funding_grant_id><pubmed_authors>Liu Y</pubmed_authors><pubmed_authors>Loi MA</pubmed_authors><pubmed_authors>Duim H</pubmed_authors><pubmed_authors>Qu J</pubmed_authors><pubmed_authors>Dijkstra S</pubmed_authors><pubmed_authors>Ye G</pubmed_authors><pubmed_authors>Talsma W</pubmed_authors><pubmed_authors>Tran K</pubmed_authors><pubmed_authors>Song J</pubmed_authors><pubmed_authors>Chiechi RC</pubmed_authors></additional><is_claimable>false</is_claimable><name>Efficient Selective Sorting of Semiconducting Carbon Nanotubes Using Ultra-Narrow-Band-Gap Polymers.</name><description>Conjugated polymers with narrow band gaps are particularly useful for sorting and discriminating semiconducting single-walled carbon nanotubes (s-SWCNT) due to the low charge carrier injection barrier for transport. In this paper, we report two newly synthesized narrow-band-gap conjugated polymers (&lt;b>PNDITEG-TVT&lt;/b> and &lt;b>PNDIC8TEG-TVT&lt;/b>) based on naphthalene diimide (NDI) and thienylennevinylene (TVT) building blocks, decorated with different polar side chains that can be used for dispersing and discriminating s-SWCNT. Compared with the mid-band-gap conjugated polymer &lt;b>PNDITEG-AH&lt;/b>, which is composed of naphthalene diimide (NDI) and head-to-head bithiophene building blocks, the addition of a vinylene linker eliminates the steric congestion present in head-to-head bithiophene, which promotes backbone planarity, extending the π-conjugation length and narrowing the band gap. Cyclic voltammetry (CV) and density functional theory (DFT) calculations suggest that inserting a vinylene group in a head-to-head bithiophene efficiently lifts the highest occupied molecular orbital (HOMO) level (-5.60 eV for &lt;b>PNDITEG-AH&lt;/b>, -5.02 eV for &lt;b>PNDITEG-TVT&lt;/b>, and -5.09 eV for &lt;b>PNDIC8TEG-TVT&lt;/b>). All three polymers are able to select for s-SWCNT, as evidenced by the sharp transitions in the absorption spectra. Field-effect transistors (FETs) fabricated with the polymer:SWCNT inks display p-dominant properties, with higher hole mobilities when using the NDI-TVT polymers as compared with &lt;b>PNDITEG-AH&lt;/b> (0.6 cm&lt;sup>2&lt;/sup> V&lt;sup>-1&lt;/sup> s&lt;sup>-1&lt;/sup> for HiPCO:&lt;b>PNDITEG-AH&lt;/b>, 1.5 cm&lt;sup>2&lt;/sup> V&lt;sup>-1&lt;/sup> s&lt;sup>-1&lt;/sup> for HiPCO:&lt;b>PNDITEG-TVT&lt;/b>, and 2.3 cm&lt;sup>2&lt;/sup> V&lt;sup>-1&lt;/sup> s&lt;sup>-1&lt;/sup> for HiPCO:&lt;b>PNDIC8TEG-TVT&lt;/b>). This improvement is due to the better alignment of the HOMO level of &lt;b>PNDITEG-TVT&lt;/b> and &lt;b>PNDIC8TEG-TVT&lt;/b> with that of the dominant SWCNT specie.</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Aug</publication><modification>2024-11-19T23:58:08.713Z</modification><creation>2024-11-19T23:58:08.713Z</creation></dates><accession>S-EPMC9412849</accession><cross_references><pubmed>35943382</pubmed><doi>10.1021/acsami.2c07158</doi></cross_references></HashMap>