{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Wang J"],"funding":["Weiguang Xie"],"pagination":["5859"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9457482"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["15(17)"],"pubmed_abstract":["Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO<sub>3</sub> is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS<sub>2</sub> to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of 10<sup>5</sup>, electron mobility about 85 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that MoO<sub>3</sub> is a potential material as gate dielectric."],"journal":["Materials (Basel, Switzerland)"],"pubmed_title":["High-<i>κ</i> van der Waals Oxide MoO<sub>3</sub> as Efficient Gate Dielectric for MoS<sub>2</sub> Field-Effect Transistors."],"pmcid":["PMC9457482"],"funding_grant_id":["2019B15152049","62174072"],"pubmed_authors":["Lai H","Liu J","Xie W","Lu Y","Huang X","Liu P","Wang J"],"additional_accession":[]},"is_claimable":false,"name":"High-<i>κ</i> van der Waals Oxide MoO<sub>3</sub> as Efficient Gate Dielectric for MoS<sub>2</sub> Field-Effect Transistors.","description":"Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO<sub>3</sub> is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS<sub>2</sub> to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of 10<sup>5</sup>, electron mobility about 85 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that MoO<sub>3</sub> is a potential material as gate dielectric.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Aug","modification":"2025-04-18T22:41:10.395Z","creation":"2025-04-07T10:23:04.18Z"},"accession":"S-EPMC9457482","cross_references":{"pubmed":["36079239"],"doi":["10.3390/ma15175859"]}}