{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Zhao B"],"funding":["Key R&amp;D Plan of Guangdong Province","National Natural Science Foundation of China"],"pagination":["3001"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9457976"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["12(17)"],"pubmed_abstract":["In the doped hafnia(HfO<sub>2</sub>)-based films, crystallization annealing is indispensable in forming ferroelectric phases. In this paper, we investigate the annealing effects of TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN metal-ferroelectric-metal (MFM) capacitors by comparing microwave annealing (MWA) and rapid thermal annealing (RTA) at the same wafer temperature of 500 °C. The twofold remanent polarization (2Pr) of the MWA device is 63 µC/cm<sup>2</sup>, surpassing that of the RTA device (40 µC/cm<sup>2</sup>). Furthermore, the wake-up effect is substantially inhibited in the MWA device. The orthorhombic crystalline phase is observed in the annealed HZO films in the MWA and RTA devices, with a reduced TiN and HZO interdiffusion in MWA devices. Moreover, the MFM capacitors subjected to MWA treatment exhibit a lower leakage current, indicating a decreased defect density. This investigation shows the potential of MWA for application in ferroelectric technology due to the improvement in remanent polarization, wake-up effect, and leakage current."],"journal":["Nanomaterials (Basel, Switzerland)"],"pubmed_title":["Improved Ferroelectric Properties in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films by Microwave Annealing."],"pmcid":["PMC9457976"],"funding_grant_id":["61634008","2019B010145001"],"pubmed_authors":["Yang X","Zhao B","Liu M","Fan L","Yan Y","Xu G","Bi J","Xu Y"],"additional_accession":[]},"is_claimable":false,"name":"Improved Ferroelectric Properties in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films by Microwave Annealing.","description":"In the doped hafnia(HfO<sub>2</sub>)-based films, crystallization annealing is indispensable in forming ferroelectric phases. In this paper, we investigate the annealing effects of TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN metal-ferroelectric-metal (MFM) capacitors by comparing microwave annealing (MWA) and rapid thermal annealing (RTA) at the same wafer temperature of 500 °C. The twofold remanent polarization (2Pr) of the MWA device is 63 µC/cm<sup>2</sup>, surpassing that of the RTA device (40 µC/cm<sup>2</sup>). Furthermore, the wake-up effect is substantially inhibited in the MWA device. The orthorhombic crystalline phase is observed in the annealed HZO films in the MWA and RTA devices, with a reduced TiN and HZO interdiffusion in MWA devices. Moreover, the MFM capacitors subjected to MWA treatment exhibit a lower leakage current, indicating a decreased defect density. This investigation shows the potential of MWA for application in ferroelectric technology due to the improvement in remanent polarization, wake-up effect, and leakage current.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Aug","modification":"2025-04-18T22:42:50.721Z","creation":"2025-04-07T10:28:11.04Z"},"accession":"S-EPMC9457976","cross_references":{"pubmed":["36080036"],"doi":["10.3390/nano12173001"]}}