biostudies-literatureZhao BKey R&D Plan of Guangdong ProvinceNational Natural Science Foundation of China3001https://www.ebi.ac.uk/biostudies/studies/S-EPMC9457976biostudies-literatureUnknown12(17)In the doped hafnia(HfO<sub>2</sub>)-based films, crystallization annealing is indispensable in forming ferroelectric phases. In this paper, we investigate the annealing effects of TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN metal-ferroelectric-metal (MFM) capacitors by comparing microwave annealing (MWA) and rapid thermal annealing (RTA) at the same wafer temperature of 500 °C. The twofold remanent polarization (2Pr) of the MWA device is 63 µC/cm<sup>2</sup>, surpassing that of the RTA device (40 µC/cm<sup>2</sup>). Furthermore, the wake-up effect is substantially inhibited in the MWA device. The orthorhombic crystalline phase is observed in the annealed HZO films in the MWA and RTA devices, with a reduced TiN and HZO interdiffusion in MWA devices. Moreover, the MFM capacitors subjected to MWA treatment exhibit a lower leakage current, indicating a decreased defect density. This investigation shows the potential of MWA for application in ferroelectric technology due to the improvement in remanent polarization, wake-up effect, and leakage current.Nanomaterials (Basel, Switzerland)Improved Ferroelectric Properties in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films by Microwave Annealing.PMC9457976616340082019B010145001Yang XZhao BLiu MFan LYan YXu GBi JXu YfalseImproved Ferroelectric Properties in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films by Microwave Annealing.In the doped hafnia(HfO<sub>2</sub>)-based films, crystallization annealing is indispensable in forming ferroelectric phases. In this paper, we investigate the annealing effects of TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN metal-ferroelectric-metal (MFM) capacitors by comparing microwave annealing (MWA) and rapid thermal annealing (RTA) at the same wafer temperature of 500 °C. The twofold remanent polarization (2Pr) of the MWA device is 63 µC/cm<sup>2</sup>, surpassing that of the RTA device (40 µC/cm<sup>2</sup>). Furthermore, the wake-up effect is substantially inhibited in the MWA device. The orthorhombic crystalline phase is observed in the annealed HZO films in the MWA and RTA devices, with a reduced TiN and HZO interdiffusion in MWA devices. Moreover, the MFM capacitors subjected to MWA treatment exhibit a lower leakage current, indicating a decreased defect density. This investigation shows the potential of MWA for application in ferroelectric technology due to the improvement in remanent polarization, wake-up effect, and leakage current.2022-01-01T00:00:00Z2022 Aug2025-04-18T22:42:50.721Z2025-04-07T10:28:11.04ZS-EPMC94579763608003610.3390/nano12173001