{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Xie H"],"funding":["Ministry of Education - Singapore (MOE)","European Research Council","Israel Science Foundation","Israel Science Foundation (ISF)","Ministry of Education - Singapore"],"pagination":["5744"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9525633"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["13(1)"],"pubmed_abstract":["Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn<sub>3</sub>Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn<sub>3</sub>Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore,"],"journal":["Nature communications"],"pubmed_title":["Magnetization switching in polycrystalline Mn<sub>3</sub>Sn thin film induced by self-generated spin-polarized current."],"pmcid":["PMC9525633"],"funding_grant_id":["ISF No. 1251/19, No. 3520/20, No. 2932/21","815869","MOE2017-T2-2-011, MOE2018-T2-1-076"],"pubmed_authors":["Xie H","Mu Z","Zhang X","Chen X","Yan B","Zhang Q","Wu Y"],"additional_accession":[]},"is_claimable":false,"name":"Magnetization switching in polycrystalline Mn<sub>3</sub>Sn thin film induced by self-generated spin-polarized current.","description":"Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn<sub>3</sub>Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn<sub>3</sub>Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore,","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Sep","modification":"2025-04-22T03:35:21.431Z","creation":"2025-02-19T00:23:18.234Z"},"accession":"S-EPMC9525633","cross_references":{"pubmed":["36180425"],"doi":["10.1038/s41467-022-33345-2"]}}