biostudies-literatureXie HMinistry of Education - Singapore (MOE)European Research CouncilIsrael Science FoundationIsrael Science Foundation (ISF)Ministry of Education - Singapore5744https://www.ebi.ac.uk/biostudies/studies/S-EPMC9525633biostudies-literatureUnknown13(1)Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn₃Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn₃Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore,Nature communicationsMagnetization switching in polycrystalline Mn₃Sn thin film induced by self-generated spin-polarized current.PMC9525633ISF No. 1251/19, No. 3520/20, No. 2932/21815869MOE2017-T2-2-011, MOE2018-T2-1-076Xie HMu ZZhang XChen XYan BZhang QWu YfalseMagnetization switching in polycrystalline Mn₃Sn thin film induced by self-generated spin-polarized current.Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn₃Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn₃Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore,2022-01-01T00:00:00Z2022 Sep2025-04-22T03:35:21.431Z2025-02-19T00:23:18.234ZS-EPMC95256333618042510.1038/s41467-022-33345-2