{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Rosova A"],"funding":["VEGA - Vedecká grantová agentúra MŠVVaŠ SR a SAV -grant agency, Slovakia"],"pagination":["3496"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9565245"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["12(19)"],"pubmed_abstract":["In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10-25 nm) continuous layer of small conical pyramids in which large conical pyramids with an approximate height of 50-80 nm were randomly distributed. The large pyramids were grown above the edge-type dislocations which originated in the GaN buffer; the dislocations did not penetrate the large, isolated pyramids. The large pyramids were well crystallized and relaxed with a small quantity of defects, such as dislocations, preferentially located at the contact zones of adjacent pyramids. The low temperature (6.5 K) photoluminescence spectra showed one clear m"],"journal":["Nanomaterials (Basel, Switzerland)"],"pubmed_title":["In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD."],"pmcid":["PMC9565245"],"funding_grant_id":["2/0005/22"],"pubmed_authors":["Rosova A","Hasenohrl S","Gucmann F","Kuzmik J","Elias P","Dobrocka E","Kucera M"],"additional_accession":[]},"is_claimable":false,"name":"In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD.","description":"In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10-25 nm) continuous layer of small conical pyramids in which large conical pyramids with an approximate height of 50-80 nm were randomly distributed. The large pyramids were grown above the edge-type dislocations which originated in the GaN buffer; the dislocations did not penetrate the large, isolated pyramids. The large pyramids were well crystallized and relaxed with a small quantity of defects, such as dislocations, preferentially located at the contact zones of adjacent pyramids. The low temperature (6.5 K) photoluminescence spectra showed one clear m","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Oct","modification":"2025-04-18T18:32:53.015Z","creation":"2025-02-19T01:02:51.56Z"},"accession":"S-EPMC9565245","cross_references":{"pubmed":["36234625"],"doi":["10.3390/nano12193496"]}}