{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Heintz A"],"funding":["Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada","Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada (NSERC Canadian Network for Research and Innovation in Machining Technology)"],"pagination":["6624"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9636155"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["13(1)"],"pubmed_abstract":["A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elas"],"journal":["Nature communications"],"pubmed_title":["Defect free strain relaxation of microcrystals on mesoporous patterned silicon."],"pmcid":["PMC9636155"],"funding_grant_id":["497981"],"pubmed_authors":["Ares R","Heintz A","Barzaghi A","Fafard S","Botton G","Pofelski A","Boucherif A","Ilahi B","Patriarche G","Isella G"],"additional_accession":[]},"is_claimable":false,"name":"Defect free strain relaxation of microcrystals on mesoporous patterned silicon.","description":"A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elas","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Nov","modification":"2026-05-03T10:38:26.048Z","creation":"2025-02-19T00:31:50.026Z"},"accession":"S-EPMC9636155","cross_references":{"pubmed":["36333304"],"doi":["10.1038/s41467-022-34288-4"]}}