<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>4(23)</volume><submitter>Zhang Y</submitter><pubmed_abstract>Graphene with a large tensile strain is a promising candidate for the new "straintronics'' applications. The current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates. In this work, a novel method for strained graphene on a rigid substrate assisted by PDMS stretching and interface adjustments is proposed. The Raman spectra show that the maximum strain of graphene on the SiO&lt;sub>2&lt;/sub>/Si substrate is ∼1.5%, and multiple characterizations demonstrate its high cleanness, flatness, integrity, and reliable electrical performance. The successful strain engineering is attributed to the protection of a layer of formvar resin and the interfacial capillary force of the buffering liquid. We believe this technique can advance strain-related fundamental</pubmed_abstract><journal>Nanoscale advances</journal><pagination>5056-5061</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9680924</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Strain engineering of graphene on rigid substrates.</pubmed_title><pmcid>PMC9680924</pmcid><pubmed_authors>Liu J</pubmed_authors><pubmed_authors>Chen Z</pubmed_authors><pubmed_authors>Zhang Y</pubmed_authors><pubmed_authors>Zhao P</pubmed_authors><pubmed_authors>Jin Y</pubmed_authors><pubmed_authors>Zhao Y</pubmed_authors><pubmed_authors>Ren Q</pubmed_authors></additional><is_claimable>false</is_claimable><name>Strain engineering of graphene on rigid substrates.</name><description>Graphene with a large tensile strain is a promising candidate for the new "straintronics'' applications. The current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates. In this work, a novel method for strained graphene on a rigid substrate assisted by PDMS stretching and interface adjustments is proposed. The Raman spectra show that the maximum strain of graphene on the SiO&lt;sub>2&lt;/sub>/Si substrate is ∼1.5%, and multiple characterizations demonstrate its high cleanness, flatness, integrity, and reliable electrical performance. The successful strain engineering is attributed to the protection of a layer of formvar resin and the interfacial capillary force of the buffering liquid. We believe this technique can advance strain-related fundamental</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Nov</publication><modification>2025-04-21T22:29:32.161Z</modification><creation>2025-04-05T18:50:27.107Z</creation></dates><accession>S-EPMC9680924</accession><cross_references><pubmed>36504754</pubmed><doi>10.1039/d2na00580h</doi></cross_references></HashMap>