{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Lin C"],"funding":["Zhejiang Provincial Innovation Team","Leading Innovative and Entrepreneur Team of Zhejiang","National Science Foundation of China","National Natural Science Foundation of China"],"pagination":["8142"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9699280"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["15(22)"],"pubmed_abstract":["The passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (<i>V<sub>oc</sub></i>) loss, as well as energy band mismatching, thus achieving the goal of high-power conversion efficiency. However, most devices incorporating organic/inorganic buffer layers suffer from poor stability and low efficiency. In this article, we have proposed an inorganic buffer layer of Cu<sub>2</sub>O, which has achieved high efficiency on lower work function metals and various frequently used hole transport layers (HTLs). Once the Cu<sub>2</sub>O buffer layer was applied to modify the Cu/PTAA interface, the device exhibited a high <i>V<sub>oc</sub></i> of 1.20 V, a high <i>FF</i> of 75.92%, and an enhanced <i>P"],"journal":["Materials (Basel, Switzerland)"],"pubmed_title":["The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells."],"pmcid":["PMC9699280"],"funding_grant_id":["No.52202241","2019R01012","No.2019R01012","52202241"],"pubmed_authors":["Xi X","Lin C","Wang Q","Sun Q","Lara DP","Zai H","Zhu B","Li M","Liu G","Wang L"],"additional_accession":[]},"is_claimable":false,"name":"The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells.","description":"The passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (<i>V<sub>oc</sub></i>) loss, as well as energy band mismatching, thus achieving the goal of high-power conversion efficiency. However, most devices incorporating organic/inorganic buffer layers suffer from poor stability and low efficiency. In this article, we have proposed an inorganic buffer layer of Cu<sub>2</sub>O, which has achieved high efficiency on lower work function metals and various frequently used hole transport layers (HTLs). Once the Cu<sub>2</sub>O buffer layer was applied to modify the Cu/PTAA interface, the device exhibited a high <i>V<sub>oc</sub></i> of 1.20 V, a high <i>FF</i> of 75.92%, and an enhanced <i>P","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Nov","modification":"2025-04-18T16:56:08.483Z","creation":"2025-04-07T04:25:13.173Z"},"accession":"S-EPMC9699280","cross_references":{"pubmed":["36431628"],"doi":["10.3390/ma15228142"]}}