biostudies-literatureLin CZhejiang Provincial Innovation TeamLeading Innovative and Entrepreneur Team of ZhejiangNational Science Foundation of ChinaNational Natural Science Foundation of China8142https://www.ebi.ac.uk/biostudies/studies/S-EPMC9699280biostudies-literatureUnknown15(22)The passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (<i>V_oc</i>) loss, as well as energy band mismatching, thus achieving the goal of high-power conversion efficiency. However, most devices incorporating organic/inorganic buffer layers suffer from poor stability and low efficiency. In this article, we have proposed an inorganic buffer layer of Cu₂O, which has achieved high efficiency on lower work function metals and various frequently used hole transport layers (HTLs). Once the Cu₂O buffer layer was applied to modify the Cu/PTAA interface, the device exhibited a high <i>V_oc</i> of 1.20 V, a high <i>FF</i> of 75.92%, and an enhanced <i>PMaterials (Basel, Switzerland)The Investigation of the Influence of a Cu₂O Buffer Layer on Hole Transport Layers in MAPbI₃-Based Perovskite Solar Cells.PMC9699280No.522022412019R01012No.2019R0101252202241Xi XLin CWang QSun QLara DPZai HZhu BLi MLiu GWang LfalseThe Investigation of the Influence of a Cu₂O Buffer Layer on Hole Transport Layers in MAPbI₃-Based Perovskite Solar Cells.The passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (<i>V_oc</i>) loss, as well as energy band mismatching, thus achieving the goal of high-power conversion efficiency. However, most devices incorporating organic/inorganic buffer layers suffer from poor stability and low efficiency. In this article, we have proposed an inorganic buffer layer of Cu₂O, which has achieved high efficiency on lower work function metals and various frequently used hole transport layers (HTLs). Once the Cu₂O buffer layer was applied to modify the Cu/PTAA interface, the device exhibited a high <i>V_oc</i> of 1.20 V, a high <i>FF</i> of 75.92%, and an enhanced <i>P2022-01-01T00:00:00Z2022 Nov2025-04-18T16:56:08.483Z2025-04-07T04:25:13.173ZS-EPMC96992803643162810.3390/ma15228142