<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>13(1)</volume><submitter>Liu Y</submitter><pubmed_abstract>Formamidinium lead iodide (FAPbI&lt;sub>3&lt;/sub>) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI&lt;sub>3&lt;/sub> perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI&lt;sub>3&lt;/sub>, two-dimensional FA&lt;sub>2&lt;/sub>FA&lt;sub>n-1&lt;/sub>Pb&lt;sub>n&lt;/sub>I&lt;sub>3n+1&lt;/sub>, and three-dimensional α-FAPbI&lt;sub>3&lt;/sub>, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI&lt;sub>3&lt;/sub>-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.</pubmed_abstract><journal>Nature communications</journal><pagination>7425</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9718757</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes.</pubmed_title><pmcid>PMC9718757</pmcid><pubmed_authors>Hu S</pubmed_authors><pubmed_authors>Wang C</pubmed_authors><pubmed_authors>Fang G</pubmed_authors><pubmed_authors>Hu X</pubmed_authors><pubmed_authors>Cong H</pubmed_authors><pubmed_authors>Wang J</pubmed_authors><pubmed_authors>Liu Y</pubmed_authors><pubmed_authors>Ke W</pubmed_authors><pubmed_authors>Gui P</pubmed_authors><pubmed_authors>Wang S</pubmed_authors><pubmed_authors>Dong K</pubmed_authors><pubmed_authors>Jia S</pubmed_authors><pubmed_authors>Wang T</pubmed_authors><pubmed_authors>Li G</pubmed_authors><pubmed_authors>Li J</pubmed_authors><pubmed_authors>Chen L</pubmed_authors><pubmed_authors>Tao C</pubmed_authors><pubmed_authors>Li P</pubmed_authors><pubmed_authors>Xiao M</pubmed_authors><pubmed_authors>Huang W</pubmed_authors><pubmed_authors>Cao Y</pubmed_authors><pubmed_authors>Gao Z</pubmed_authors><pubmed_authors>Liu C</pubmed_authors><pubmed_authors>Ye F</pubmed_authors><pubmed_authors>Yao F</pubmed_authors></additional><is_claimable>false</is_claimable><name>Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes.</name><description>Formamidinium lead iodide (FAPbI&lt;sub>3&lt;/sub>) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI&lt;sub>3&lt;/sub> perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI&lt;sub>3&lt;/sub>, two-dimensional FA&lt;sub>2&lt;/sub>FA&lt;sub>n-1&lt;/sub>Pb&lt;sub>n&lt;/sub>I&lt;sub>3n+1&lt;/sub>, and three-dimensional α-FAPbI&lt;sub>3&lt;/sub>, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI&lt;sub>3&lt;/sub>-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Dec</publication><modification>2026-05-29T19:00:54.377Z</modification><creation>2025-04-07T06:22:17.999Z</creation></dates><accession>S-EPMC9718757</accession><cross_references><pubmed>36460647</pubmed><doi>10.1038/s41467-022-35218-0</doi></cross_references></HashMap>