<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>13(1)</volume><submitter>Nguyen CT</submitter><pubmed_abstract>The integration of bottom-up fabrication techniques and top-down methods can overcome current limits in nanofabrication. For such integration, we propose a gradient area-selective deposition using atomic layer deposition to overcome the inherent limitation of 3D nanofabrication and demonstrate the applicability of the proposed method toward large-scale production of materials. Cp(CH&lt;sub>3&lt;/sub>)&lt;sub>5&lt;/sub>Ti(OMe)&lt;sub>3&lt;/sub> is used as a molecular surface inhibitor to prevent the growth of TiO&lt;sub>2&lt;/sub> film in the next atomic layer deposition process. Cp(CH&lt;sub>3&lt;/sub>)&lt;sub>5&lt;/sub>Ti(OMe)&lt;sub>3&lt;/sub> adsorption was controlled gradually in a 3D nanoscale hole to achieve gradient TiO&lt;sub>2&lt;/sub> growth. This resulted in the formation of perfectly seamless TiO&lt;sub>2&lt;/sub> films with a high-aspect-ratio hole structure. The experimental results were consistent with theoretical calculations based on density functional theory, Monte Carlo simulation, and the Johnson-Mehl-Avrami-Kolmogorov model. Since the gradient area-selective deposition TiO&lt;sub>2&lt;/sub> film formation is based on the fundamentals of molecular chemical and physical behaviours, this approach can be applied to other material systems in atomic layer deposition.</pubmed_abstract><journal>Nature communications</journal><pagination>7597</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9734176</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control.</pubmed_title><pmcid>PMC9734176</pmcid><pubmed_authors>Shin S</pubmed_authors><pubmed_authors>Lee S</pubmed_authors><pubmed_authors>Gu B</pubmed_authors><pubmed_authors>Nguyen CT</pubmed_authors><pubmed_authors>Lee HB</pubmed_authors><pubmed_authors>Park J</pubmed_authors><pubmed_authors>Cho EH</pubmed_authors><pubmed_authors>Kim HS</pubmed_authors><pubmed_authors>Shong B</pubmed_authors><pubmed_authors>Yu NK</pubmed_authors><pubmed_authors>Lee JY</pubmed_authors></additional><is_claimable>false</is_claimable><name>Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control.</name><description>The integration of bottom-up fabrication techniques and top-down methods can overcome current limits in nanofabrication. For such integration, we propose a gradient area-selective deposition using atomic layer deposition to overcome the inherent limitation of 3D nanofabrication and demonstrate the applicability of the proposed method toward large-scale production of materials. Cp(CH&lt;sub>3&lt;/sub>)&lt;sub>5&lt;/sub>Ti(OMe)&lt;sub>3&lt;/sub> is used as a molecular surface inhibitor to prevent the growth of TiO&lt;sub>2&lt;/sub> film in the next atomic layer deposition process. Cp(CH&lt;sub>3&lt;/sub>)&lt;sub>5&lt;/sub>Ti(OMe)&lt;sub>3&lt;/sub> adsorption was controlled gradually in a 3D nanoscale hole to achieve gradient TiO&lt;sub>2&lt;/sub> growth. This resulted in the formation of perfectly seamless TiO&lt;sub>2&lt;/sub> films with a high-aspect-ratio hole structure. The experimental results were consistent with theoretical calculations based on density functional theory, Monte Carlo simulation, and the Johnson-Mehl-Avrami-Kolmogorov model. Since the gradient area-selective deposition TiO&lt;sub>2&lt;/sub> film formation is based on the fundamentals of molecular chemical and physical behaviours, this approach can be applied to other material systems in atomic layer deposition.</description><dates><release>2022-01-01T00:00:00Z</release><publication>2022 Dec</publication><modification>2025-04-05T11:51:37.078Z</modification><creation>2025-04-05T11:51:37.078Z</creation></dates><accession>S-EPMC9734176</accession><cross_references><pubmed>36494441</pubmed><doi>10.1038/s41467-022-35428-6</doi></cross_references></HashMap>