{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["7(49)"],"submitter":["Shao E"],"pubmed_abstract":["Metal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometry, and first-principle calculations. We reveal that the AlSe surface alloy possesses a closed-packed atomic structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with a height difference of 1.16 Å. Our results indicate that the AlSe alloy hosts two hole-like bands, which are mainly derived from the in-plane orbital of AlSe (p <sub><i>x</i></sub> and p <sub><i>y</i></sub> ). These two bands located at about -2.22 ±0.01 eV around the Gamma point, far below the Fermi level, distinguished from other metal chalcogenides and binary alloys. AlSe alloys have the advantages of large-scale atomic flat terraces and a wide band gap, appropriate to serve as an interface layer for two-dimensional materials. Meanwhile, our results provide implications for related Al-chalcogen interfaces."],"journal":["ACS omega"],"pagination":["45174-45180"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC9753200"],"repository":["biostudies-literature"],"pubmed_title":["New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111)."],"pmcid":["PMC9753200"],"pubmed_authors":["Shao E","Qiu J","Liu K","Xie H","Geng K","Bai K","Wang J","Song J","Wang WX"],"additional_accession":[]},"is_claimable":false,"name":"New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111).","description":"Metal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometry, and first-principle calculations. We reveal that the AlSe surface alloy possesses a closed-packed atomic structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with a height difference of 1.16 Å. Our results indicate that the AlSe alloy hosts two hole-like bands, which are mainly derived from the in-plane orbital of AlSe (p <sub><i>x</i></sub> and p <sub><i>y</i></sub> ). These two bands located at about -2.22 ±0.01 eV around the Gamma point, far below the Fermi level, distinguished from other metal chalcogenides and binary alloys. AlSe alloys have the advantages of large-scale atomic flat terraces and a wide band gap, appropriate to serve as an interface layer for two-dimensional materials. Meanwhile, our results provide implications for related Al-chalcogen interfaces.","dates":{"release":"2022-01-01T00:00:00Z","publication":"2022 Dec","modification":"2025-04-18T16:30:25.943Z","creation":"2025-04-07T03:45:48.888Z"},"accession":"S-EPMC9753200","cross_references":{"pubmed":["36530266"],"doi":["10.1021/acsomega.2c05606"]}}