biostudies-literatureUnknown7(49)Shao EMetal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometry, and first-principle calculations. We reveal that the AlSe surface alloy possesses a closed-packed atomic structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with a height difference of 1.16 Å. Our results indicate that the AlSe alloy hosts two hole-like bands, which are mainly derived from the in-plane orbital of AlSe (p _<i>x</i> and p _<i>y</i> ). These two bands located at about -2.22 ±0.01 eV around the Gamma point, far below the Fermi level, distinguished from other metal chalcogenides and binary alloys. AlSe alloys have the advantages of large-scale atomic flat terraces and a wide band gap, appropriate to serve as an interface layer for two-dimensional materials. Meanwhile, our results provide implications for related Al-chalcogen interfaces.ACS omega45174-45180https://www.ebi.ac.uk/biostudies/studies/S-EPMC9753200biostudies-literatureNew Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111).PMC9753200Shao EQiu JLiu KXie HGeng KBai KWang JSong JWang WXfalseNew Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111).Metal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometry, and first-principle calculations. We reveal that the AlSe surface alloy possesses a closed-packed atomic structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with a height difference of 1.16 Å. Our results indicate that the AlSe alloy hosts two hole-like bands, which are mainly derived from the in-plane orbital of AlSe (p _<i>x</i> and p _<i>y</i> ). These two bands located at about -2.22 ±0.01 eV around the Gamma point, far below the Fermi level, distinguished from other metal chalcogenides and binary alloys. AlSe alloys have the advantages of large-scale atomic flat terraces and a wide band gap, appropriate to serve as an interface layer for two-dimensional materials. Meanwhile, our results provide implications for related Al-chalcogen interfaces.2022-01-01T00:00:00Z2022 Dec2025-04-18T16:30:25.943Z2025-04-07T03:45:48.888ZS-EPMC97532003653026610.1021/acsomega.2c05606