<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>24(1)</volume><submitter>Ashida Y</submitter><pubmed_abstract>Vanadium dioxide (VO&lt;sub>2&lt;/sub>) material, known for changing physical properties due to metal-insulator transition (MIT) near room temperature, has been reported to undergo a phase change depending on the strain. This fact can be a significant problem for nanoscale devices in VO&lt;sub>2&lt;/sub>, where the strain field covers a large area fraction, spatially non-uniform, and the amount of strain can vary during the MIT process. Direct measurement of the strain field distribution during MIT is expected to establish a methodology for material phase identification. We have demonstrated the effectiveness of geometric phase analysis (GPA), high-resolution transmission electron microscopy techniques, and transmission electron diffraction (TED). The GPA images show that the nanoregions of interest a</pubmed_abstract><journal>Science and technology of advanced materials</journal><pagination>1-9</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC9793943</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Quantitative spatial mapping of distorted state phases during the metal-insulator phase transition for nanoscale VO&lt;sub>2&lt;/sub> engineering.</pubmed_title><pmcid>PMC9793943</pmcid><pubmed_authors>Naruse N</pubmed_authors><pubmed_authors>Ishibe T</pubmed_authors><pubmed_authors>Yang J</pubmed_authors><pubmed_authors>Nakamura Y</pubmed_authors><pubmed_authors>Ashida Y</pubmed_authors></additional><is_claimable>false</is_claimable><name>Quantitative spatial mapping of distorted state phases during the metal-insulator phase transition for nanoscale VO&lt;sub>2&lt;/sub> engineering.</name><description>Vanadium dioxide (VO&lt;sub>2&lt;/sub>) material, known for changing physical properties due to metal-insulator transition (MIT) near room temperature, has been reported to undergo a phase change depending on the strain. This fact can be a significant problem for nanoscale devices in VO&lt;sub>2&lt;/sub>, where the strain field covers a large area fraction, spatially non-uniform, and the amount of strain can vary during the MIT process. Direct measurement of the strain field distribution during MIT is expected to establish a methodology for material phase identification. We have demonstrated the effectiveness of geometric phase analysis (GPA), high-resolution transmission electron microscopy techniques, and transmission electron diffraction (TED). The GPA images show that the nanoregions of interest a</description><dates><release>2023-01-01T00:00:00Z</release><publication>2023</publication><modification>2025-04-04T14:10:46.299Z</modification><creation>2025-04-04T14:10:46.299Z</creation></dates><accession>S-EPMC9793943</accession><cross_references><pubmed>36583095</pubmed><doi>10.1080/14686996.2022.2150525</doi></cross_references></HashMap>